JAN2N2920-Dual-Transistor by JAN | High-Speed Switching | TO-18 Metal Can Package

  • This dual-transistor device enables efficient signal amplification, improving circuit performance and control.
  • The specified voltage and current ratings ensure reliable operation under typical load conditions.
  • Its compact package design supports space-saving layouts on densely populated printed circuit boards.
  • Ideal for switching applications, it enhances response times and overall system efficiency in electronic devices.
  • Manufactured to meet standard quality protocols, the JAN2N2920-Dual-Transistor offers consistent and durable performance.
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产品上方询盘

JAN2N2920-Dual-Transistor Overview

The JAN2N2920-Dual-Transistor is a high-performance NPN silicon transistor pair designed for switching and amplification applications in industrial and military-grade electronics. This dual transistor device integrates two matched transistors within a single package, offering improved circuit efficiency and space savings. Rated for continuous collector current up to 600mA and a collector-emitter voltage of 40V, it ensures reliable operation under demanding conditions. The device complies with JAN (Joint Army-Navy) specifications, reflecting its ruggedness and suitability for critical applications requiring robust electrical characteristics and long-term stability. Ideal for engineers and sourcing specialists seeking trusted discrete transistor solutions from IC Manufacturer.

JAN2N2920-Dual-Transistor Key Features

  • Dual matched NPN transistors: Enables precise amplification and switching with balanced electrical characteristics, minimizing circuit offset and improving performance consistency.
  • High collector current rating (600mA): Supports load-driving capability for moderate power applications, enhancing design flexibility for industrial control circuits.
  • Collector-emitter voltage up to 40V: Suitable for a wide range of low to medium voltage applications, ensuring device robustness under typical operating voltages.
  • JAN military-grade qualification: Guarantees enhanced reliability and extended operational lifetime in harsh environments, ideal for aerospace and defense systems.

JAN2N2920-Dual-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Dual
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40 to 300
Package Type TO-18 Metal Can
Operating Temperature Range -55 to +125 ??C
Transition Frequency 100 MHz

JAN2N2920-Dual-Transistor Advantages vs Typical Alternatives

This dual-transistor device offers significant advantages over typical single-transistor alternatives by integrating two closely matched NPN transistors within one package, which improves circuit symmetry and reduces component count. Its military-grade JAN certification ensures superior reliability and performance in harsh environments, making it more robust than commercial equivalents. The combination of moderate voltage and current ratings with high gain and bandwidth provides engineers with a versatile and precise solution for switching and amplification tasks.

Typical Applications

  • Signal amplification and switching in aerospace and defense electronics, where reliability and matched transistor characteristics are critical for system stability.
  • Driver stages in industrial control systems requiring moderate power handling and consistent transistor gain.
  • Complementary transistor pairs in analog circuits, improving linearity and reducing distortion for precision signal processing.
  • General-purpose amplification in communication equipment, benefiting from compact dual-transistor integration.

JAN2N2920-Dual-Transistor Brand Info

The JAN2N2920-Dual-Transistor is part of a family of military-grade discrete semiconductor devices manufactured under strict quality controls to meet Joint Army-Navy (JAN) specifications. This brand is recognized for its commitment to delivering reliable, high-performance components tailored for demanding industrial and defense applications. The product’s rugged TO-18 metal can package and stringent testing protocols ensure consistent electrical parameters and enhanced durability across a wide temperature range.

FAQ

What does the JAN designation signify for this dual transistor?

The JAN prefix indicates that this transistor meets the Joint Army-Navy military standards, ensuring it has been tested for enhanced reliability, temperature stability, and ruggedness. This makes it suitable for critical aerospace and defense applications where component failure is not an option.

What are the key electrical limits to consider when using this device?

The maximum collector current is 600mA, and the collector-emitter voltage rating is 40V, which define the safe operating boundaries. Designers must ensure the circuit does not exceed these limits to maintain device reliability and prevent damage.

How does the dual transistor configuration benefit circuit design?

Having two matched transistors in a single package reduces layout complexity and improves performance consistency by minimizing parameter variations between the devices. This is especially beneficial in differential amplifier or push-pull circuit topologies.

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产品中间询盘

What is the typical gain bandwidth product, and why is it important?

The gain bandwidth product is approximately 100MHz, indicating the frequency range over which the transistor can provide gain. This makes it suitable for moderate-speed amplification and switching applications, balancing performance and power consumption.

In what package is this transistor supplied, and what are the thermal considerations?

The transistors are housed in a TO-18 metal can package, which provides good thermal conductivity and mechanical robustness. Adequate heat sinking or thermal management should be considered during design to maintain operation within the specified temperature range of -55??C to +125??C.

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