JAN2N2919L-Dual-Transistor by JAN | High-Gain Amplifier | TO-39 Metal Can Package

JAN2N2919L-Dual-Transistor Overview

The JAN2N2919L-Dual-Transistor is a high-performance NPN bipolar junction transistor designed for complementary transistor arrays and discrete amplification. Engineered to deliver consistent switching and amplification with reliable gain characteristics, it is ideal for high-reliability military and industrial applications. This dual transistor configuration integrates two matched transistors in one package, simplifying circuit design while maintaining robust electrical performance. Its rugged construction ensures stable operation under demanding environmental conditions. Sourced from a trusted IC Manufacturer, this device is optimized for precision signal processing and power management in complex electronic systems.

JAN2N2919L-Dual-Transistor Key Features

• Dual matched transistor pair: Ensures consistent gain and performance across both transistors, enabling precise amplification and switching in push-pull or complementary circuits.
• High current gain (hFE): Provides efficient signal amplification, reducing the need for additional gain stages and enhancing overall circuit efficiency.
• Robust military-grade construction: Designed for extended reliability and thermal stability in harsh environments, suitable for aerospace and defense electronics.
• Low noise characteristics: Supports sensitive analog signal processing with minimal distortion, improving signal integrity in communication and instrumentation applications.

JAN2N2919L-Dual-Transistor Technical Specifications

JAN2N2919L-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor stands out by combining two precisely matched NPN transistors in a single package, reducing board space and improving thermal matching. Compared to single-transistor alternatives, it provides enhanced gain uniformity and reliability, vital for sensitive analog and switching circuits. Its military-grade specifications ensure superior durability and consistent performance under extreme conditions, making it preferable for high-reliability industrial and defense applications.

Typical Applications

• Complementary amplifier stages in audio and signal processing equipment, where matched transistor pairs reduce distortion and improve linearity.
• Switching circuits requiring reliable and fast transistor operation for efficient power management.
• High-reliability military and aerospace electronic systems demanding robust components with stable performance over wide temperature ranges.
• Analog signal conditioning circuits in instrumentation and sensor interfaces needing low noise and consistent gain characteristics.

JAN2N2919L-Dual-Transistor Brand Info

The JAN2N2919L-Dual-Transistor is produced under stringent quality controls, adhering to military standards for performance and reliability. This transistor??s construction and testing align with industry requirements for ruggedness and long-term stability. The brand behind this product is recognized for delivering precision semiconductor devices tailored to meet the demanding needs of industrial, aerospace, and defense markets, ensuring dependable integration into complex electronic systems.

FAQ

What is the maximum collector current rating for this dual transistor?

The maximum continuous collector current for each transistor within the package is 800 mA. This rating ensures the device can handle moderate power switching and amplification tasks without degradation.

Can this dual transistor operate reliably over a wide temperature range?

Yes, it supports an operating temperature range from -55??C up to +125??C, making it suitable for applications exposed to harsh or fluctuating environmental conditions.

What package type does this transistor come in, and why is it important?

This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection. Such packaging is essential for maintaining device stability and reliability in demanding applications.

How does the dual transistor configuration benefit circuit design?

By integrating two matched transistors in a single package, it simplifies layout design, ensures better thermal matching, and reduces component count, which lowers overall system complexity and improves performance consistency.

Is the current gain (hFE) consistent across both transistors in this dual device?

Yes, the device is designed to provide closely matched current gain values ranging between 100 and 300 for both transistors, supporting balanced operation in complementary and differential amplifier circuits.