JAN2N2907AUBP-Transistor-PIND | PNP Bipolar Junction Transistor | TO-92 Package

JAN2N2907AUBP-Transistor-PIND Overview

The JAN2N2907AUBP is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications in industrial electronic circuits. It features a robust construction compliant with Joint Army-Navy (JAN) specifications, ensuring high reliability in demanding environments. This transistor offers dependable performance with a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V, making it suitable for medium power applications. Its complementary design and ruggedness make it a preferred choice for engineers and sourcing specialists requiring a balance of performance and durability. For trusted semiconductor components, visit IC Manufacturer.

JAN2N2907AUBP-Transistor-PIND Technical Specifications

JAN2N2907AUBP-Transistor-PIND Key Features

• High reliability and ruggedness: Built to JAN military standards, ensuring consistent performance in harsh industrial environments.
• Medium power handling capability: Supports collector currents up to 600 mA, suitable for various switching and amplification tasks.
• Wide voltage ratings: Collector-emitter and collector-base voltages rated at 60 V provide flexibility in circuit design.
• Low noise operation: Ideal for audio and signal amplification applications requiring minimal interference.
• Metal TO-18 package: Enhances thermal dissipation and mechanical robustness for extended operational life.

Typical Applications

• General-purpose amplification in industrial control circuits, including signal conditioning and low-noise preamplifiers.
• Switching applications in relay drivers and load switches within automation systems.
• Complementary transistor stages in audio amplifiers and power management modules.
• Military and aerospace electronics requiring components with proven reliability under extreme conditions.

JAN2N2907AUBP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers enhanced reliability and ruggedness due to its JAN military-grade certification, providing superior performance in demanding applications compared to standard commercial transistors. Its metal TO-18 package improves thermal management and durability, which is critical for industrial and aerospace environments. Additionally, the wide voltage and current ratings combined with low noise characteristics make it a versatile and dependable choice over typical alternatives lacking these stringent specifications.

JAN2N2907AUBP-Transistor-PIND Brand Info

The JAN2N2907AUBP is a part of the JAN (Joint Army-Navy) series of transistors, historically recognized for their stringent quality and reliability standards mandated by U.S. military specifications. These devices are typically manufactured by reputable semiconductor producers specializing in high-reliability discrete components for defense, aerospace, and industrial sectors. The JAN2N2907AUBP embodies the legacy of rugged, tested performance essential in mission-critical electronics where failure is not an option.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for the JAN2N2907AUBP transistor is 600 mA, allowing it to handle moderate power levels suitable for switching and amplification tasks in various industrial applications.

What type of package does this transistor use, and why is it important?