JAN2N2907AUB-Transistor PNP Bipolar Junction Transistor, TO-18 Metal Can Package

JAN2N2907AUB-Transistor Overview

The JAN2N2907AUB transistor is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features robust electrical characteristics suitable for moderate power handling with reliable operation in industrial and military-grade environments. The device is housed in a compact SOT-223 package, facilitating ease of integration into compact circuit designs. With excellent gain and frequency response, it meets the demands of engineers requiring dependable transistor performance. This product is sourced from a reputable IC Manufacturer known for quality and consistency in semiconductor components.

JAN2N2907AUB-Transistor Technical Specifications

JAN2N2907AUB-Transistor Key Features

• High Current Capacity: Supports collector currents up to 800 mA, enabling use in moderate power switching and amplification circuits.
• Wide Voltage Range: Collector-emitter voltage rating of 60 V provides flexibility for various industrial and automotive applications.
• Compact SOT-223 Package: Facilitates surface mount assembly with improved thermal performance and space savings on PCB layouts.
• High Transition Frequency: Typical f_T of 100 MHz allows operation in high-frequency circuits, improving signal integrity and switching speed.

Typical Applications

• General-purpose amplifier stages in audio and signal processing circuits, delivering reliable gain with stable performance.
• Switching applications in power management systems, including relay drivers and load control circuits.
• Industrial control systems requiring durable transistors capable of operating over a wide temperature range.
• Automotive electronics that demand robust transistors for control and switching functions under harsh conditions.

JAN2N2907AUB-Transistor Advantages vs Typical Alternatives

This transistor stands out for its balance between power handling and frequency response within a compact surface-mount package. Compared to typical alternatives, it offers enhanced thermal dissipation and a higher current rating, improving reliability and efficiency in switching and amplification roles. Its wide operating temperature range and robust voltage ratings make it a dependable choice for industrial and automotive environments where durability and consistent performance are critical.

JAN2N2907AUB-Transistor Brand Info

The JAN2N2907AUB transistor is produced under the JAN (Joint Army-Navy) military specification, historically ensuring high reliability and stringent quality standards. This device is typically manufactured by established semiconductor producers specializing in military-grade components. The JAN designation indicates compliance with rigorous testing for temperature, power, and electrical performance, making it suitable for aerospace, defense, and other demanding industrial applications. The SOT-223 package is a modern adaptation supporting surface mount technology for contemporary assembly lines.

FAQ

What is the maximum collector current for this transistor?

The transistor supports a maximum collector current of 800 mA, allowing it to handle moderate power loads in switching and amplification circuits without degradation.

Can this transistor operate in high-temperature environments?

Yes, it is rated for operation from -55??C to +150??C, making it suitable for harsh industrial and automotive environments where temperature extremes are common.

What package type does this transistor use and why is it beneficial?

It uses the SOT-223 surface-mount package, which offers a compact footprint and improved heat dissipation compared to traditional through-hole packages, aiding in efficient PCB layouts and thermal management.

Is this transistor suitable for high-frequency switching applications?

With a typical transition frequency (f_T