JAN2N2907AUA/TR NPN Transistor by ON Semiconductor, TO-92 Package ?C High Performance

  • This device functions as a transistor, enabling efficient current control in electronic circuits for improved performance.
  • The specified voltage rating ensures safe operation under typical electrical stress, enhancing circuit stability and protection.
  • Its compact package type provides board-space savings, making it suitable for designs with limited physical area.
  • Ideal for switching applications in power regulation, the model supports reliable operation in various electronic control systems.
  • Manufactured to meet quality standards, it ensures consistent performance and long-term reliability in demanding environments.
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JAN2N2907AUA/TR Overview

The JAN2N2907AUA/TR is a high-performance PNP bipolar junction transistor designed for a wide range of industrial and military applications. This transistor features a robust design capable of handling medium power and switching tasks with reliable operation in harsh environments. It offers a maximum collector current of 600 mA and a collector-emitter voltage rating suitable for many amplification and switching needs. The device’s military-grade JAN (Joint Army-Navy) qualification ensures enhanced quality, durability, and consistency, making it a preferred choice for demanding applications requiring stable performance under thermal and electrical stress. For more details, visit IC Manufacturer.

JAN2N2907AUA/TR Key Features

  • High Current Handling: Supports collector current up to 600 mA, enabling effective power amplification and switching in medium-power circuits.
  • Robust Voltage Ratings: Collector-emitter voltage rating of 60 V allows reliable operation in circuits with moderate voltage requirements.
  • Military-Grade Quality: JAN specification guarantees enhanced reliability and stringent testing, ideal for defense and aerospace applications.
  • Low Noise Performance: Suitable for low-noise amplifier designs, improving signal fidelity in sensitive electronic circuits.

JAN2N2907AUA/TR Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
DC Current Gain (hFE) 100 to 300
Power Dissipation (PD) 800 mW
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +200 ??C

JAN2N2907AUA/TR Advantages vs Typical Alternatives

This transistor offers superior reliability due to its JAN military-grade certification, making it more robust than typical commercial-grade alternatives. Its combination of moderate voltage and current ratings with low noise characteristics enables precise, efficient operation in power-sensitive and noise-sensitive circuits. The extensive operating temperature range ensures consistent performance in demanding industrial environments, which enhances system longevity and reduces maintenance requirements.

Typical Applications

  • Switching and amplification in industrial control circuits where reliable medium power transistor operation is essential.
  • Signal amplification in audio and low-noise preamplifier stages, benefiting from the device??s low noise design.
  • Military and aerospace systems requiring rugged, dependable components with extended temperature and stress tolerances.
  • General-purpose transistor applications in power management and electronic interface circuits.

JAN2N2907AUA/TR Brand Info

The JAN2N2907AUA/TR is part of a trusted series of transistors recognized for meeting rigorous military standards. This designation signifies compliance with strict quality and reliability procedures, ensuring the device’s suitability for critical applications. The product line is supported by extensive testing and quality assurance protocols that align with industry and defense requirements, providing engineers with confidence in long-term performance and stability under challenging conditions.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum continuous collector current of 600 mA, allowing it to handle moderate power levels in switching and amplification applications without risk of damage.

How does the JAN qualification affect the transistor??s reliability?

JAN (Joint Army-Navy) qualification ensures the transistor undergoes rigorous testing for durability, consistency, and performance under harsh environmental conditions, making it highly reliable for military and industrial use.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor is suitable for moderate high-frequency applications such as RF amplification and signal processing.

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What temperature range can the transistor operate within?

The device maintains reliable operation across a wide temperature spectrum, from -55??C to +200??C, accommodating extreme industrial and aerospace environments.

Is this transistor suitable for low-noise amplifier circuits?

Yes, its design supports low-noise operation, making it ideal for use in audio preamplifiers and other signal-sensitive applications where minimizing noise is critical.

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