JAN2N2907AL-Transistor Overview
The JAN2N2907AL is a high-reliability PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features a robust maximum collector current of 600mA and collector-emitter voltage rating of 60V, making it suitable for moderate power loads in industrial and military-grade electronics. Its complementary design ensures compatibility with common NPN counterparts in push-pull configurations. With a guaranteed gain bandwidth product and stable performance under varied temperature conditions, this transistor meets stringent military standards for durability and consistency. Engineers and sourcing specialists can rely on this component for dependable operation in demanding environments. For more information, visit the IC Manufacturer.
JAN2N2907AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 600 mA |
| Power Dissipation (PD) | 800 mW |
| DC Current Gain (hFE) | 100 ?C 300 (varies with test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Collector-Base Voltage (VCBO) | 60 V |
| Operating Temperature Range | -55??C to +200??C (MIL-STD-750 compliant) |
| Package Type | TO-18 Metal Can |
JAN2N2907AL-Transistor Key Features
- High collector current capability: Supports up to 600mA, enabling efficient handling of moderate power loads in switching circuits.
- Wide voltage ratings: Collector-emitter and collector-base voltages up to 60V provide flexibility across a broad range of industrial applications.
- Military-grade reliability: Qualified to MIL-STD-750 standards, ensuring consistent operation even in harsh environmental conditions.
- Low noise and stable gain: Ideal for amplification circuits requiring precise signal integrity and minimal distortion.
- TO-18 hermetic metal package: Offers improved thermal conductivity and mechanical durability compared to plastic encapsulated transistors.
Typical Applications
- Linear amplification stages in industrial control and instrumentation systems requiring stable gain and temperature resilience.
- Switching elements in power management circuits handling loads up to 600mA with reliable turn-on and turn-off characteristics.
- Complementary push-pull amplifier configurations paired with NPN transistors for audio amplification or signal processing.
- Military and aerospace electronics demanding high-reliability discrete components with extended operating temperature ranges.
JAN2N2907AL-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its military-grade qualification, ensuring high reliability and stable performance under extreme conditions. Compared to typical commercial transistors, it offers enhanced gain stability, higher temperature tolerance, and a durable metal TO-18 package that improves thermal dissipation. These factors make it a preferred choice for engineers requiring precision, longevity, and ruggedness in demanding industrial and defense applications.
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JAN2N2907AL-Transistor Brand Info
The JAN prefix denotes compliance with Joint Army-Navy (JAN) military specifications, indicating this transistor meets rigorous quality and reliability standards set by the U.S. Department of Defense. Such components are typically manufactured by established semiconductor producers specializing in military-grade parts. The 2N2907 family is a widely recognized line of PNP transistors with broad acceptance in industrial and defense sectors. The ??AL?? suffix designates a specific gain group and test condition set within this series, ensuring traceable performance parameters for critical applications.
FAQ
What is the maximum operating voltage of this transistor?
The transistor supports a maximum collector-emitter voltage (VCEO) of 60 volts, allowing it to operate safely in circuits requiring moderate voltage handling capability without breakdown.
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Can this transistor be used in high-temperature environments?
Yes, it is qualified for operation across a wide temperature






