JAN2N2906AUBC-Transistor PNP Amplifier Transistor in TO-126 Package by ON Semiconductor

JAN2N2906AUBC-Transistor Overview

The JAN2N2906AUBC transistor is a high-reliability PNP bipolar junction transistor designed for switching and amplification in demanding industrial environments. With a collector-emitter voltage rating of 40 V and continuous collector current up to 0.6 A, this transistor supports medium-power applications. Its robust construction meets military and aerospace-grade standards, ensuring consistent performance under harsh conditions. The device??s complementary NPN counterpart and standardized pin configuration facilitate seamless circuit integration. Engineers and sourcing specialists can leverage this transistor for precise control in analog and digital circuits, benefiting from its dependable switching speed and low leakage currents. For more details, visit the IC Manufacturer.

JAN2N2906AUBC-Transistor Technical Specifications

JAN2N2906AUBC-Transistor Key Features

• High voltage tolerance: Supports up to 40 V collector-emitter voltage, enabling reliable operation in medium-power circuits.
• Robust current handling: Continuous collector current rating of 0.6 A ensures suitability for moderate load switching and amplification tasks.
• Wide operating temperature range: Rated from -65??C to +200??C, making it ideal for aerospace and military applications requiring thermal endurance.
• High DC current gain: Gain values between 40 and 300 provide excellent amplification efficiency, improving signal integrity in analog systems.
• Standardized TO-18 metal can package: Offers enhanced mechanical durability and thermal dissipation compared to plastic packages.
• Low leakage currents: Ensures minimal idle power loss and precise switching behavior, critical for sensitive electronic instrumentation.

Typical Applications

• Switching elements in control circuits for military and aerospace systems where reliability under extreme conditions is essential.
• General-purpose amplification in analog signal processing circuits requiring medium power and voltage handling.
• Complementary transistor pairs in power regulation and driver circuits, enhancing system efficiency and stability.
• Temperature-sensitive sensor interface stages benefiting from the device??s wide operating temperature tolerance.

JAN2N2906AUBC-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its compliance with military-grade quality standards, ensuring superior reliability and ruggedness compared to commercial equivalents. Its wide temperature range and robust voltage ratings make it preferable in harsh industrial environments. Additionally, the metal TO-18 package improves thermal performance and mechanical strength, offering advantages over plastic-packaged alternatives. These attributes collectively contribute to enhanced circuit longevity and consistent performance in critical applications.

JAN2N2906AUBC-Transistor Brand Info

The JAN2N2906AUBC is manufactured under military specifications, typically associated with trusted semiconductor suppliers specializing in defense and aerospace components. The ??JAN?? prefix indicates compliance with Joint Army-Navy (JAN) standards, reflecting stringent quality and reliability benchmarks. This transistor is often sourced from manufacturers known for rugged, high-performance discrete devices built for mission-critical applications. Its design and testing processes ensure dependable operation in environments where standard commercial transistors may fail.

FAQ

What type of transistor is the JAN2N2906AUBC?

The device is a PNP bipolar junction transistor (BJT), designed for medium-power switching and amplification. It operates with a collector-emitter voltage rating of