JAN2N2906AUA-Transistor PNP Bipolar Junction Transistor – TO-92 Package by ON Semiconductor

JAN2N2906AUA-Transistor Overview

The JAN2N2906AUA is a robust PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to deliver reliable performance in demanding industrial environments, this transistor features a collector-emitter voltage rating of 40 V and a collector current capacity of up to 600 mA. Its rugged construction ensures stable operation across a wide temperature range, making it well-suited for signal amplification, low-noise stages, and power switching circuits. Sourced from a trusted supplier, the device aligns with military and industrial standards, offering enhanced durability and consistent electrical characteristics. For more detailed information and sourcing options, visit the IC Manufacturer website.

JAN2N2906AUA-Transistor Technical Specifications

JAN2N2906AUA-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 40 V, enabling use in medium-voltage switching applications with confidence.
• Substantial collector current: Handles continuous currents up to 600 mA, facilitating efficient power control in amplifier and driver circuits.
• Wide operating temperature range: Reliable performance from -55??C to +150??C ensures stability in harsh industrial and military environments.
• Consistent gain characteristics: DC current gain between 100 and 300 supports predictable amplification, critical for analog signal fidelity.

Typical Applications

• Signal amplification in audio and communication devices, where linearity and low noise are essential for clear signal processing.
• Switching elements in relay drivers and low-power motor controls, leveraging its capability to handle moderate collector currents.
• Voltage regulation and stabilization circuits, benefiting from its stable gain and voltage ratings for consistent operation.
• Industrial control systems requiring reliable switching and amplification under varying temperature conditions.

JAN2N2906AUA-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling balance of voltage rating, current capacity, and gain stability compared to typical alternatives. Its extended operating temperature and rugged design deliver superior reliability in industrial and military settings. The combination of moderate power dissipation and broad frequency response provides enhanced efficiency and integration flexibility, making it a preferred choice for engineers seeking durable, consistent performance in demanding applications.

JAN2N2906AUA-Transistor Brand Info

The JAN2N2906AUA transistor is part of the JAN (Joint Army-Navy) series, a military grade designation historically associated with high-reliability semiconductor devices. Manufactured under strict quality controls, this device meets or exceeds MIL-STD-750 standards, ensuring robustness and longevity. Typically sourced from established semiconductor manufacturers specializing in defense and industrial-grade components, this transistor supports applications requiring stringent performance and reliability criteria. Its brand identity is synonymous with durability and trusted performance in challenging environments.

FAQ

What is the maximum collector current rating of the JAN2N2906AUA transistor?

The maximum collector current for this transistor is 600 mA. This rating defines the maximum continuous current the device can safely handle without exceeding thermal or electrical limits, making it suitable for moderate power amplification and switching tasks.

Application	Automotive Electronics, Industrial Automation, Telecommunications and Networking