JAN2N2906AL-Transistor PNP Amplifier Transistor in TO-18 Metal Can Package by JAN

  • This transistor amplifies or switches electronic signals, enabling efficient circuit control and signal processing.
  • Featuring a specific gain characteristic, it ensures consistent amplification crucial for stable electronic performance.
  • The compact package design minimizes board space, allowing for tighter assembly in complex electronic layouts.
  • Ideal for use in low-power switching circuits, it enhances device responsiveness and energy efficiency.
  • Manufactured under controlled conditions, the component maintains reliable operation across various environments.
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JAN2N2906AL-Transistor Overview

The JAN2N2906AL is a high-reliability PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured to military specifications, this transistor offers enhanced ruggedness and consistent performance in demanding environments. It features a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, making it suitable for medium power applications. The device??s robust design ensures stable operation over a wide temperature range, meeting the stringent requirements of aerospace, defense, and industrial systems. For sourcing and detailed specifications, consult IC Manufacturer.

JAN2N2906AL-Transistor Technical Specifications

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current, Continuous (IC) 600 mA
Power Dissipation (Ptot) 800 mW
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +125 ??C

JAN2N2906AL-Transistor Key Features

  • Military Grade Reliability: Designed and tested to meet JAN (Joint Army-Navy) standards, ensuring consistent operation in harsh and critical environments.
  • Medium Power Handling: Supports collector currents up to 600mA, making it suitable for a wide range of switching and amplification tasks.
  • Wide Voltage Tolerance: With a collector-emitter voltage rating of 40V, it accommodates various circuit configurations requiring moderate voltage levels.
  • High Gain Performance: The transistor provides a DC current gain range of 100 to 300, enabling efficient signal amplification with minimal input drive.
  • Temperature Stability: Operates reliably across an extended temperature range from -55??C to +125??C, supporting applications in extreme conditions.
  • Frequency Response: Offers a transition frequency of 100 MHz, allowing effective operation in moderate frequency analog and switching circuits.
  • Compact TO-18 Package: The metal can package enhances thermal dissipation and mechanical robustness for demanding industrial usage.

Typical Applications

  • General-purpose amplification and switching in aerospace and defense electronic systems requiring high reliability and stable operation.
  • Signal amplification in industrial control circuits where dependable transistor performance is critical under varying environmental stresses.
  • Low-to-medium power switching applications in military communication devices and instrumentation equipment.
  • Temperature-sensitive circuits in rugged environments including avionics, military radar, and sensor interface modules.

JAN2N2906AL-Transistor Advantages vs Typical Alternatives

This transistor delivers superior reliability and consistent performance compared to standard commercial-grade alternatives due to its military qualification. Its robust voltage and current ratings combined with high gain and temperature tolerance provide enhanced sensitivity and operational accuracy in critical systems. The rugged metal package supports better thermal management and mechanical stability, making it a preferred choice for engineers seeking durable, high-performance transistors for industrial and defense applications.

JAN2N2906AL-Transistor Brand Info

The JAN2N2906AL transistor is a product historically associated with leading semiconductor manufacturers

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