JAN2N2605UB-Transistor NPN Power Amplifier in TO-3 Package by ON Semiconductor

JAN2N2605UB-Transistor Overview

The JAN2N2605UB is a high-performance bipolar junction transistor designed for switching and amplification in demanding industrial and military-grade applications. It features robust voltage and current handling capabilities, ensuring reliable operation under elevated stress conditions. This transistor is optimized for use in power control circuits, offering stable gain and low saturation voltage to enhance efficiency. Manufactured to meet strict quality standards, the device supports long-term reliability and consistent performance in harsh environments. For engineers and sourcing specialists seeking a durable and precise transistor solution, the JAN2N2605UB provides a trusted choice backed by rigorous qualification. For more detailed product support, visit IC Manufacturer.

JAN2N2605UB-Transistor Technical Specifications

JAN2N2605UB-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 260 V, enabling operation in high-voltage power switching applications with enhanced safety margins.
• Robust current handling: Continuous collector current rating of 8 A allows effective control of substantial loads without thermal or electrical stress failures.
• Wide temperature range: Operating junction temperature from -65??C to +200??C ensures reliable performance in extreme environments, critical for military and aerospace use.
• Stable gain characteristics: DC current gain between 20 and 70 supports consistent amplification, improving signal integrity in analog and digital circuits.

Typical Applications

• Power switching circuits in industrial control systems, where high voltage and current handling are essential for efficient load management and protection.
• Amplifier stages in audio and RF equipment requiring stable gain and linearity across a broad temperature range.
• Military and aerospace electronics demanding rugged, reliable transistor performance under extreme temperature and environmental conditions.
• High-voltage regulator and inverter circuits used in power supplies and energy conversion systems, benefiting from the transistor??s robust voltage and current specifications.

JAN2N2605UB-Transistor Advantages vs Typical Alternatives

This transistor excels in applications requiring high voltage and current capacity combined with wide temperature tolerance, offering superior reliability compared to standard transistors. Its enhanced gain stability and power dissipation capabilities reduce thermal stress and improve efficiency, making it an optimal choice for industrial and military-grade circuits. The JAN2N2605UB??s rugged construction and precise electrical characteristics provide a clear advantage in demanding environments over typical commercial alternatives.

JAN2N2605UB-Transistor Brand Info

The JAN2N2605UB is a part of the JAN (Joint Army-Navy) series, manufactured under strict military standards to ensure high reliability and performance. These transistors are typically produced by suppliers specializing in defense-grade semiconductor components. The JAN designation guarantees compliance with MIL-STD-750 testing procedures, reflecting the device??s suitability for aerospace, defense, and industrial applications requiring rigorous quality assurance and traceability.

FAQ

What type of transistor is the JAN2N2605UB?

The device is an NPN bipolar junction transistor (BJT), designed primarily for high voltage and high power switching and amplification tasks.

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