JAN2N2604UB Transistor – NPN Power Transistor, TO-3P Package by ON Semiconductor

JAN2N2604UB-Transistor Overview

The JAN2N2604UB is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial and military-grade electronics. This transistor is built to meet stringent military standards, offering enhanced reliability and ruggedness in demanding environments. Featuring a high collector-emitter voltage rating and substantial collector current capacity, it delivers consistent performance in power amplification and signal processing roles. Its robust packaging and electrical characteristics make it suitable for aerospace, defense, and industrial control systems. Sourcing this device from a trusted IC Manufacturer ensures compliance with quality and reliability standards required in critical electronic designs.

JAN2N2604UB-Transistor Technical Specifications

JAN2N2604UB-Transistor Key Features

• High Voltage Capability: With a collector-emitter voltage rating of 100V, this transistor supports high-voltage switching and amplification without breakdown, ensuring durability in demanding circuits.
• Robust Collector Current Handling: Supports collector currents up to 2A, enabling reliable operation in power amplification and driver stages with sufficient margin for transient loads.
• Wide DC Current Gain Range: The gain range of 40 to 160 allows flexibility in circuit design for varying amplification needs and signal conditioning.
• Military-Grade Reliability: Constructed to meet military standards, it ensures stable performance under harsh environmental conditions, including temperature extremes and mechanical stress.

Typical Applications

• Power amplification stages in industrial control systems requiring high voltage and current handling capabilities for driving motors and actuators.
• Switching devices in aerospace electronics where reliability and strict quality standards are mandatory.
• Signal amplification in military communication equipment that demands stable gain and rugged performance.
• General-purpose transistor use in high-reliability environments, such as instrumentation and measurement systems with stringent operational requirements.

JAN2N2604UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to many standard NPN devices, making it ideal for high-power and high-reliability applications. Its military-grade construction provides enhanced robustness and thermal stability, reducing failure rates in critical systems. Compared to typical commercial transistors, it integrates stringent quality controls and packaging that ensure long-term operational reliability, benefiting engineers sourcing components for demanding industrial and defense projects.

JAN2N2604UB-Transistor Brand Info

The JAN prefix indicates this transistor conforms to Joint Army-Navy (JAN) military specifications, historically maintained by manufacturers such as Fairchild Semiconductor, ON Semiconductor, or Texas Instruments. These devices are produced under strict military quality controls to ensure reliability and performance under extreme conditions. The 2N2604UB is a variant of the standard 2N2604 transistor, coated with additional screening and testing for use in aerospace and defense sectors. It is typically available through authorized distributors specializing in military-grade semiconductors.

FAQ

What is the maximum voltage rating of this transistor?

The transistor supports a maximum collector-emitter voltage (V_CEO) of 100 volts, allowing it to operate safely in circuits with relatively high voltage levels without risk of breakdown.

Can this transistor handle high collector currents for power applications?