JAN2N2432UB-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JAN2N2432UB-Transistor Overview

The JAN2N2432UB is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring robust switching and amplification capabilities. It offers reliable operation over a wide range of temperatures and conditions, ensuring dependable performance in demanding environments. With its sturdy junction breakdown voltage and optimized gain characteristics, this transistor is suitable for medium-power amplification and switching tasks. Sourced from a trusted supplier, the device meets stringent quality and reliability standards, making it a preferred choice for engineers and sourcing specialists seeking durable and efficient transistor solutions. For more detailed sourcing options, visit IC Manufacturer.

JAN2N2432UB-Transistor Technical Specifications

JAN2N2432UB-Transistor Key Features

• High voltage ratings: Supports up to 100 V collector-base voltage, enabling use in medium voltage circuits with substantial margin for safe operation.
• Robust current handling: Allows collector currents up to 1.5 A, suitable for moderate power amplification and switching tasks.
• Wide operating temperature range: Maintains performance between -55??C and +125??C, critical for military and industrial environments.
• Reliable gain characteristics: DC current gain from 40 to 120 ensures consistent amplification, simplifying design considerations.

Typical Applications

• Medium power amplifier stages in communication and control systems where stable gain and voltage handling are necessary for signal integrity.
• Switching circuits in industrial machinery requiring robust transistors capable of handling moderate currents safely.
• Military and aerospace electronics benefiting from the transistor??s extended temperature range and rugged specifications.
• General purpose amplification and signal conditioning in harsh environmental conditions demanding reliable semiconductor components.

JAN2N2432UB-Transistor Advantages vs Typical Alternatives

This transistor combines high voltage tolerance and current capacity with a wide temperature operating range, offering superior reliability compared to many standard NPN transistors. Its enhanced gain stability under varying environmental conditions ensures consistent performance, while robust power dissipation allows for efficient thermal management. These advantages make it an ideal choice for engineers seeking durable and precise transistor solutions in industrial and military-grade applications.

JAN2N2432UB-Transistor Brand Info

The JAN2N2432UB is a designation used primarily for military-specification bipolar transistors originally produced by manufacturers such as Fairchild Semiconductor and later by ON Semiconductor. The “JAN” prefix indicates compliance with Joint Army-Navy standards, ensuring high reliability and ruggedness for use in defense and aerospace systems. This product typically features hermetic packaging and thorough screening to meet stringent quality requirements. It remains a trusted component for engineers needing proven performance in critical applications.

FAQ

What is the maximum collector current rating of the JAN2N2432UB transistor?

The maximum collector current is rated at 1.5 amperes, allowing the transistor to handle moderate power levels suitable for switching and amplification in industrial and military circuits.

What voltage levels can this transistor safely operate at?

The transistor supports a collector-emitter voltage up to 60 volts and a collector-base voltage up to 100 volts, providing ample headroom for medium voltage applications.

How does the temperature range of this transistor affect its usability?

With an operating temperature range from -55??C to +125??C, it is well-suited for harsh environments where temperature extremes are common, such as aerospace and military electronics.

What gain characteristics can be expected from this transistor?

The DC current gain (hFE) ranges from 40 to