JAN2N2432AUB-Transistor NPN Power Amplifier Transistor in TO-3 Package by JAN

JAN2N2432AUB-Transistor Overview

The JAN2N2432AUB is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications requiring robust switching and amplification capabilities. This transistor features enhanced gain characteristics, high voltage tolerance, and reliable operation under demanding environmental conditions. Optimized for medium power and high-frequency applications, it offers engineers a dependable solution for signal amplification and switching tasks. Sourced from a trusted IC Manufacturer, this transistor meets stringent quality standards suitable for aerospace, defense, and industrial electronics systems.

JAN2N2432AUB-Transistor Technical Specifications

JAN2N2432AUB-Transistor Key Features

• High Voltage and Current Capability: Supports up to 60 V collector-emitter voltage and 1.5 A collector current, enabling reliable operation in medium-power circuits.
• Wide Gain Range: DC current gain from 40 to 160 ensures flexibility across various amplification requirements, improving signal integrity.
• Robust Thermal Performance: Rated for junction temperatures up to 200??C, supporting high-reliability applications in harsh environments.
• Metal Can Package (TO-39): Enhances thermal dissipation and mechanical robustness, critical for industrial and military-grade deployments.

Typical Applications

• Amplification stages in communication equipment, where stable gain and power handling are essential for signal clarity and system reliability.
• Switching components in industrial control systems requiring fast response and durable performance under variable loads.
• Driver transistors for relay control circuits, leveraging high current capacity and voltage tolerance for efficient actuation.
• Military and aerospace electronic modules that demand components capable of withstanding elevated temperatures and mechanical stress.

JAN2N2432AUB-Transistor Advantages vs Typical Alternatives

This transistor offers superior thermal tolerance and a robust metal can package, enhancing reliability compared to plastic-encapsulated alternatives. Its wide gain range and high voltage handling provide engineers with flexibility and durability in demanding applications. These advantages make it a preferred choice for critical industrial and military systems where consistent performance and long-term stability are paramount.

JAN2N2432AUB-Transistor Brand Info

The JAN2N2432AUB is a military-grade transistor originally specified under the Joint Army-Navy (JAN) standards, indicating stringent quality and reliability requirements. It is typically manufactured by reputable semiconductor producers specializing in defense and aerospace components. This product adheres to MIL-STD-750 testing protocols, ensuring it meets rigorous electrical, mechanical, and environmental standards. The robust design and proven performance record make it a trusted component in high-reliability electronic systems worldwide.

FAQ

What type of transistor is the JAN2N2432AUB and what are its primary characteristics?

The JAN2N2432AUB is an NPN bipolar junction transistor designed for medium power and high-frequency applications. It features a collector-emitter voltage rating of 60 V, collector current up to 1.5 A, and a DC current gain ranging from 40 to 160, making it suitable for amplification and switching tasks in demanding environments.

What packaging does this transistor use and why is it important?

This transistor is housed in a TO-39 metal can package, which provides excellent thermal dissipation and mechanical protection. This packaging is critical for maintaining performance and reliability in industrial and military applications subject to high temperatures and physical stress.

In which applications is the JAN2N2432AUB typically employed?

It is commonly used in communication equipment amplification stages,