JAN2N2432A-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by JAN

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • The device features a specified voltage rating, ensuring safe operation within designed limits.
  • Its compact package design supports efficient board space utilization in dense assemblies.
  • Ideal for switching applications, it enhances performance in power regulation and signal modulation.
  • Manufactured to meet industry standards, it provides consistent reliability under varied conditions.
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JAN2N2432A-Transistor Overview

The JAN2N2432A is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. Featuring a robust gain bandwidth product and reliable electrical characteristics, this transistor ensures consistent operation in demanding industrial environments. Its complementary design and rugged construction make it suitable for use in high-frequency circuits and power regulation. Engineers and sourcing specialists will appreciate its compliance with military standards, ensuring superior quality and long-term reliability. For detailed specifications and sourcing, visit the IC Manufacturer.

JAN2N2432A-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A
Power Dissipation (PD) 30 W
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 30 MHz
Operating Temperature Range -65??C to +200??C

JAN2N2432A-Transistor Key Features

  • High Power Handling: Supports collector currents up to 3A, enabling efficient medium power amplification.
  • Wide Voltage Ratings: Collector-Emitter voltage up to 60V allows operation in various intermediate voltage circuits.
  • Military-Grade Reliability: Designed and tested to meet stringent military standards, ensuring durability in harsh environments.
  • Broad Temperature Tolerance: Operates reliably from -65??C to +200??C, ideal for extreme industrial applications.

Typical Applications

  • Power amplification in RF and audio circuits, where moderate gain and power dissipation are required for stable signal boosting.
  • Switching components in industrial control systems that demand reliable operation under varying load conditions.
  • Voltage regulation and driver stages in power supplies, providing steady current handling with high efficiency.
  • Military and aerospace electronics requiring robust, temperature-resistant transistors for critical system reliability.

JAN2N2432A-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced power dissipation and voltage ratings compared to many standard NPN transistors, making it well-suited for demanding applications. Its military-grade qualification ensures superior reliability and thermal stability, which typical commercial transistors may not guarantee. The broad current gain range allows flexible circuit design, improving overall system performance and efficiency.

JAN2N2432A-Transistor Brand Info

The JAN2N2432A is a military-specification transistor originally produced by reputable semiconductor manufacturers conforming to JAN (Joint Army-Navy) standards. These transistors are known for their ruggedness, precision manufacturing, and strict quality controls. Often supplied under license by various IC manufacturers, the device maintains consistent electrical parameters and reliability expected in defense and aerospace sectors. The JAN prefix indicates compliance with MIL-PRF-19500 or equivalent military performance specifications, providing confidence in mission-critical deployments.

FAQ

What type of transistor is the JAN2N2432A and what are its primary uses?

The device is an NPN bipolar junction transistor designed primarily for medium power amplification and switching tasks. It is widely used in industrial, military, and aerospace applications requiring reliable performance under harsh conditions.

What voltage and current limits should be observed when using this transistor?

This transistor supports a maximum collector-emitter voltage of 60 V and a collector current up to 3 A. Staying within these limits ensures stable operation and prevents device failure.

How does the operating temperature range of this

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