JAN2N2369AUA-Transistor by JAN – NPN Transistor, High Gain, TO-39 Metal Package

  • This transistor amplifies electrical signals, enabling efficient signal processing in various circuits.
  • Featuring a high gain parameter, it ensures strong signal amplification with minimal distortion.
  • Its compact package design saves board space, allowing for streamlined device layouts.
  • Ideal for switching and amplification in communication devices, enhancing performance and responsiveness.
  • Manufactured under strict quality controls, it offers consistent operation and long-term reliability.
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JAN2N2369AUA-Transistor Overview

The JAN2N2369AUA transistor is a high-performance NPN bipolar junction transistor designed for amplification and switching applications. Engineered to operate reliably under stringent military standards, this transistor offers robust electrical characteristics, ensuring stable performance in demanding environments. Its low noise figure and moderate gain make it suitable for RF and general-purpose amplification tasks. With a maximum collector current of 0.8 A and voltage ratings optimized for industrial and defense applications, it provides dependable switching capabilities. The device??s rugged construction supports long-term durability, making it a preferred choice for engineers sourcing components for critical systems. For more details on sourcing and technical data, visit IC Manufacturer.

JAN2N2369AUA-Transistor Key Features

  • High Collector-Emitter Voltage: Supports up to 40 V, enabling reliable operation in medium-voltage circuits.
  • Collector Current Capacity: Handles up to 0.8 A continuous collector current, suitable for moderate power amplification and switching.
  • Low Noise Characteristics: Ideal for RF signal amplification where signal integrity and minimal interference are critical.
  • Military-Grade Reliability: Built to meet JAN (Joint Army-Navy) standards, ensuring enhanced durability and performance in harsh environments.

JAN2N2369AUA-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN ?C
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 0.8 A
Power Dissipation (Pd) 0.8 W
DC Current Gain (hFE) 70 to 300 ?C
Transition Frequency (fT) 100 MHz
Package Type TO-18 Metal Can ?C

JAN2N2369AUA-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and consistent performance under military-standard conditions, which typical commercial-grade transistors may lack. Its high voltage ratings and robust current capabilities provide superior handling of moderate power loads. The low noise figure and high transition frequency make it more effective for RF and switching applications, delivering improved signal quality and efficiency compared to generic alternatives. Its rugged metal can package ensures thermal stability and long-term durability, key for critical industrial and defense applications.

Typical Applications

  • RF amplification circuits requiring low noise and stable gain over a wide frequency range, commonly found in communication equipment and signal processing systems.
  • Switching applications in military and aerospace electronics where high reliability and robustness are mandatory.
  • General-purpose amplification in industrial control systems that demand stable performance under varying environmental conditions.
  • Signal amplification in instrumentation and measurement devices needing high accuracy and low distortion.

JAN2N2369AUA-Transistor Brand Info

The JAN2N2369AUA transistor is manufactured to meet the stringent specifications of the Joint Army-Navy (JAN) standard, a hallmark of military-grade electronic components. This designation indicates rigorous quality control and environmental testing to ensure the device performs reliably in harsh and mission-critical environments. The product is typically sourced from trusted suppliers specializing in defense and industrial semiconductor components, providing engineers with confidence in its long-term stability and performance consistency.

FAQ

What type of transistor is the JAN2N2369AUA?

The JAN2N2369AUA is an NPN bipolar junction transistor designed for amplification and switching applications. It features a metal can package and is built to military-grade standards, ensuring robust operation.

What are the maximum voltage and current ratings for this transistor?

This transistor supports a maximum collector-emitter voltage of 40 V and a collector current of up to 0.8 A, making it suitable for moderate power applications.

Why is the JAN2N2369AUA preferred in military and industrial applications?

Its compliance with JAN standards guarantees enhanced durability, reliability, and performance under harsh environmental and electrical conditions, which are critical requirements in military and industrial sectors.

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产品中间询盘

What packaging does this transistor use, and how does it benefit the user?

The device uses a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection, helping maintain stable operation and longevity in demanding environments.

Can this transistor be used for RF applications?

Yes, the JAN2N2369AUA features a transition frequency around 100 MHz and low noise characteristics, making it well-suited for RF amplification and signal processing tasks.

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