JAN2N2222AP-Transistor-PIND Overview
The JAN2N2222AP-Transistor-PIND is a high-reliability NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a PIND (Plastic-Injection Molded Dual) package that ensures robust mechanical protection and enhanced thermal stability. This transistor offers a collector current capacity of up to 800 mA with a maximum collector-emitter voltage of 40 V, making it suitable for moderate power applications. Its fast switching characteristics and dependable gain make it an ideal choice for industrial electronics, signal amplification, and low-to-medium power switching circuits. Sourcing this component from IC Manufacturer guarantees quality and consistency for demanding engineering projects.
JAN2N2222AP-Transistor-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | – |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 800 | mA |
| Gain Bandwidth Product (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 to 300 | – |
| Package Type | PIND (Plastic-Injection Molded Dual) | – |
| Operating Temperature Range | -55 to +150 | ??C |
JAN2N222AP-Transistor-PIND Key Features
- High collector current capability: Supports up to 800 mA, allowing reliable operation in moderate power switching and amplification tasks.
- Robust voltage ratings: With a collector-emitter voltage of 40 V and collector-base voltage of 75 V, it provides ample headroom for many industrial control circuits.
- Fast switching speed: The gain bandwidth product of 300 MHz ensures efficient performance in high-frequency signal processing and switching applications.
- Durable PIND package: Encapsulation protects the transistor from environmental stresses and enhances thermal dissipation, improving device longevity and reliability.
Typical Applications
- General-purpose amplification in audio, signal, and industrial control circuits where moderate power handling is required and fast switching is beneficial.
- Switching loads such as relays, LEDs, and small motors in automation and instrumentation systems.
- Driver stages for power transistors or MOSFETs in circuits requiring intermediate power amplification.
- Pulse generation and signal conditioning in communication equipment and test instrumentation.
JAN2N2222AP-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage, current, and frequency capabilities that outperform many generic NPN transistors. Its robust PIND packaging improves mechanical and thermal durability, making it more reliable in harsh industrial environments. The wide operating temperature range and consistent gain performance provide engineers with a dependable solution that enhances circuit stability and longevity compared to typical plastic-encapsulated transistors.
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JAN2N2222AP-Transistor-PIND Brand Info
The JAN2N2222AP is a military-standard variant of the well-known 2N2222 transistor, produced under stringent quality controls to meet military and industrial specifications. This device is commonly manufactured by reputable semiconductor companies specializing in high-reliability discrete components. The “JAN” prefix indicates compliance with Joint Army-Navy standards, ensuring rigorous testing for temperature, noise, and electrical performance. Its PIND packaging further confirms adherence to advanced manufacturing
