JAN2N2222A-Transistor NPN Amplifier Switching Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its maximum collector current supports reliable operation under moderate load conditions.
  • The compact TO-18 package offers space-saving benefits for densely populated circuit boards.
  • Ideal for signal amplification in audio devices, improving sound clarity and performance.
  • Manufactured to meet standard quality measures, ensuring consistent and stable functionality.
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JAN2N2222A-Transistor Overview

The JAN2N2222A is a high-performance NPN bipolar junction transistor (BJT) widely recognized for its robustness and versatility in switching and amplification applications. Designed for military and industrial-grade use, this transistor features a high current gain and fast switching capabilities, making it suitable for a broad range of electronic circuits. It offers reliable operation under demanding conditions, including elevated voltages and currents, while maintaining low saturation voltage and excellent frequency response. Available through IC Manufacturer, the JAN2N2222A ensures consistent quality and performance, meeting stringent standards for aerospace, defense, and industrial electronics.

JAN2N2222A-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 (at IC = 150 mA)
Transition Frequency (fT) 300 MHz
Package Type TO-18 Metal Can

JAN2N2222A-Transistor Key Features

  • High current gain: Provides efficient amplification with gain values between 100 and 300, enabling precise signal control in low-power circuits.
  • Fast switching speed: Transition frequency up to 300 MHz supports high-frequency applications, reducing switching losses and improving circuit responsiveness.
  • Robust voltage ratings: With collector-base voltage of 75 V and collector-emitter voltage of 40 V, it withstands demanding voltage conditions reliably.
  • Compact TO-18 metal can package: Ensures enhanced thermal dissipation and durability, ideal for harsh environments and military-grade applications.

Typical Applications

  • Switching and amplification in general-purpose analog and digital circuits requiring reliable performance under moderate voltages and currents.
  • High-frequency signal processing circuits that benefit from the transistor??s 300 MHz transition frequency for fast response times.
  • Driver stages for relays, LEDs, and small motors in industrial control systems, leveraging its high gain and switching capabilities.
  • Military and aerospace electronics where ruggedness, thermal stability, and precise amplification are critical for system reliability.

JAN2N2222A-Transistor Advantages vs Typical Alternatives

This transistor offers superior switching speed and higher current gain compared to many standard NPN BJTs, enhancing circuit efficiency and accuracy. Its robust voltage ratings and metal can package provide increased reliability in industrial and military environments, outperforming plastic-encapsulated alternatives. These characteristics make it a preferred choice for engineers seeking durable, high-performance amplification and switching components in demanding applications.

JAN2N2222A-Transistor Brand Info

The JAN prefix designates this transistor as part of the Joint Army-Navy (JAN) series, indicating compliance with strict military specifications for quality, reliability, and performance. The 2N2222A is a standardized transistor type originally developed by several manufacturers, including Texas Instruments, ON Semiconductor, and Fairchild Semiconductor. The JAN2N2222A variant adheres to military-grade standards, offering enhanced parameter consistency and ruggedness. This device is widely available through reputable suppliers specializing in industrial and defense-grade semiconductors.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 800 mA, making it suitable for moderate power amplification and switching tasks in

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