JAN2N2219-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

JAN2N2219-Transistor Overview

The JAN2N2219-Transistor is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. It is widely recognized for its robust electrical characteristics, including a collector current rating of up to 800mA and a collector-emitter voltage of 40V, making it suitable for a variety of industrial and consumer electronics circuits. This transistor exhibits excellent gain bandwidth, ensuring efficient signal amplification with low distortion. Its durable construction supports reliable operation in demanding environments. For engineers and sourcing specialists looking for a dependable transistor solution, the JAN2N2219 is a proven choice available through IC Manufacturer.

JAN2N2219-Transistor Technical Specifications

JAN2N2219-Transistor Key Features

• High current capacity: Capable of handling collector currents up to 800mA, enabling robust medium-power amplification suitable for diverse applications.
• Wide voltage ratings: Supports collector-emitter voltages up to 40V and collector-base voltages up to 75V, providing flexibility in circuit design and operation.
• Reliable gain performance: Offers a broad current gain range, ensuring precise signal amplification and effective switching in analog and digital circuits.
• High transition frequency: With a typical f_T of 250 MHz, it facilitates high-speed switching and RF applications.
• Durable TO-39 package: The metal can package enhances thermal dissipation and mechanical stability for reliable long-term performance.

Typical Applications

• Audio amplification circuits where medium power and low distortion are critical to delivering clear sound performance.
• Switching regulators and power supply circuits requiring reliable transistor switching under moderate current and voltage levels.
• General-purpose amplification in industrial control systems, providing robust operation in a variety of electrical environments.
• Low noise RF amplification stages, benefiting from the device??s high transition frequency and gain characteristics.

JAN2N2219-Transistor Advantages vs Typical Alternatives

This transistor provides superior power handling and voltage ratings compared to many standard small-signal transistors, making it ideal for applications demanding higher current and voltage margins. Its wide gain range and high transition frequency enable versatile use in both amplification and switching roles. The rugged TO-39 packaging ensures enhanced thermal management and mechanical durability, offering increased reliability over plastic-encapsulated alternatives.

JAN2N2219-Transistor Brand Info

The JAN prefix denotes a Joint Army-Navy specification transistor, reflecting a military-grade standard for quality and reliability. The 2N2219 device is a standardized NPN transistor widely manufactured by semiconductor companies adhering to this rigorous specification. It is typically produced by established brands specializing in discrete semiconductor components, ensuring consistent performance and traceability. This transistor??s legacy and specification compliance make it a trusted component in defense, industrial, and commercial electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for the device is 800 milliamperes (mA), allowing it to handle