JAN2N2060L-Dual-Transistor Power Amplifier in TO-3 Package ?C High Performance

JAN2N2060L-Dual-Transistor Overview

The JAN2N2060L-Dual-Transistor is a high-performance silicon NPN transistor designed for precision amplification and switching applications. Featuring a dual transistor configuration in a single package, it offers improved circuit density and consistent matched characteristics between the two transistors. This device is ideal for analog signal processing, differential amplifier stages, and other industrial electronics requiring reliable gain and low noise. Built to military standards, it ensures enhanced reliability and long-term stability under demanding environmental conditions. For more detailed product information and sourcing options, visit IC Manufacturer.

JAN2N2060L-Dual-Transistor Technical Specifications

JAN2N2060L-Dual-Transistor Key Features

• Dual matched transistors in one package provide precise gain matching, critical for differential amplifier designs and current mirror circuits.
• High voltage and current handling capabilities allow use in robust switching and amplification tasks without premature breakdown.
• Military-grade construction ensures extended reliability and stable performance under harsh thermal and mechanical stresses.
• Low noise characteristics make it suitable for sensitive analog signal applications requiring minimal signal distortion.

Typical Applications

• Differential amplifier stages in industrial control systems, benefiting from matched transistor pairs for accurate signal processing and noise reduction.
• Push-pull amplifier circuits requiring balanced transistor pairs to improve linearity and output power efficiency.
• Signal switching in automated instrumentation, leveraging the high voltage and current ratings for reliable operation.
• Analog comparator circuits where precise transistor matching enhances threshold accuracy and response consistency.

JAN2N2060L-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers superior matching and balanced gain compared to discrete transistor pairs, streamlining circuit design and improving accuracy in amplification. Its robust voltage and current ratings surpass many standard transistors, enhancing reliability in industrial and military applications. The integrated configuration reduces board space and potential thermal mismatches, delivering consistent performance where precision and durability are critical.

JAN2N2060L-Dual-Transistor Brand Info

The JAN2N2060L-Dual-Transistor is manufactured under stringent military specifications, often produced by established semiconductor suppliers specializing in high-reliability discrete components. This transistor is part of a legacy series designed to meet MIL-STD-883 and related standards, ensuring suitability for aerospace, defense, and industrial sectors. The manufacturer provides comprehensive quality assurance, including extended temperature range testing and ruggedized packaging, supporting demanding electronic system requirements worldwide.

FAQ

What is the maximum collector current rating for this dual transistor?

The maximum collector current rating is 1 ampere per transistor. This allows the device to handle moderate power loads suitable for amplification and switching in various industrial applications.

Can this transistor operate reliably in extreme temperature environments?

Yes, it supports an operating temperature range from -55??C to +125??C, making it ideal for use in harsh conditions such as military, aerospace, and industrial environments.

What package type does this dual transistor use, and why is it important?

The device is housed in a TO-18 metal can package, providing excellent thermal dissipation and mechanical durability. This package also supports stable electrical characteristics and helps maintain transistor matching over temperature.

How does the dual transistor configuration benefit circuit designers?

Having two matched transistors in a