JAN2N1890S-Transistor Overview
The JAN2N1890S transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification in demanding industrial applications. It offers robust current handling capacity and reliable operation at elevated voltages, making it suitable for rugged environments. With its complementary balance of gain, voltage rating, and power dissipation, this transistor ensures efficient signal control and power management. Ideal for defense, aerospace, and industrial electronics, the device meets rigorous military standard quality requirements. Sourced from a trusted IC Manufacturer, it supports precision engineering and dependable system integration.
JAN2N1890S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 5 A (continuous) |
| Power Dissipation (PD) | 30 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 30 MHz (typical) |
| Package Type | TO-3 Metal Can |
JAN2N1890S-Transistor Key Features
- High Voltage Capability: Supports up to 80 V collector-emitter voltage, enabling operation in moderate to high voltage circuits without breakdown.
- Robust Current Handling: Continuous collector current rating of 5 A provides reliable performance in power amplification and switching applications.
- Wide Gain Range: DC current gain from 40 to 160 allows flexibility in circuit design, optimizing signal amplification across various operating points.
- Thermally Efficient Package: The TO-3 metal can package enhances heat dissipation, improving reliability and longevity under industrial operating conditions.
Typical Applications
- Power amplifiers in industrial control systems, where stable gain and high current capacity ensure signal integrity in harsh environments.
- Switching circuits requiring rapid response and durable performance, such as motor drivers and relay controllers.
- Audio amplification stages benefiting from the transistor’s linearity and consistent gain characteristics.
- Military and aerospace electronics where device ruggedness and compliance with military-grade standards are mandatory for dependable operation.
JAN2N1890S-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to many general-purpose devices, enhancing power handling without compromising gain stability. Its metal TO-3 package enables better thermal management, increasing device reliability in industrial and military applications. The broad gain range supports diverse circuit requirements, making it a versatile choice over typical low-power or surface-mount transistors. These advantages contribute to improved system efficiency, durability, and performance consistency.
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JAN2N1890S-Transistor Brand Info
The JAN2N1890S is a military-grade transistor originally produced under the Joint Army-Navy (JAN) standard, reflecting stringent quality and reliability criteria. Typically manufactured by established semiconductor suppliers specializing in defense and aerospace components, this device adheres to MIL-STD specifications for environmental and electrical performance. Its robust design and verified manufacturing processes make it a preferred component in high-reliability applications requiring long-term operational stability and ruggedness.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a continuous collector current of up to 5 amperes, allowing it to handle substantial load currents in power switching and amplification circuits without degradation.
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In what package is the transistor supplied, and how does it affect performance?
This transistor comes in a TO-3 metal can package, which provides excellent thermal conductivity and heat dissipation. This packaging choice improves reliability and allows the device to operate efficiently at elevated power levels.
Can this transistor be used in high-frequency applications?
With a typical transition frequency of around 30 MHz, the device is suitable for moderate-frequency applications






