JAN2N1717-Transistor by JAN – High Gain NPN Transistor, TO-18 Metal Package

  • This transistor controls current flow efficiently, enabling reliable switching in electronic circuits.
  • Featuring a voltage rating suitable for various signal amplification tasks, it ensures stable performance under load.
  • The compact package design helps save board space, facilitating integration into dense electronic assemblies.
  • Commonly used in audio amplifiers, it enhances signal clarity and reduces distortion during operation.
  • Manufactured following standard quality checks, it offers dependable operation over extended usage periods.
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JAN2N1717-Transistor Overview

The JAN2N1717 transistor is a high-performance NPN bipolar junction transistor designed for reliable switching and amplification in industrial and military-grade electronic circuits. Engineered for robust operation under stringent conditions, this transistor offers dependable gain and current handling capabilities that meet demanding system requirements. Featuring a TO-18 metal can package, it ensures excellent thermal stability and mechanical durability. Its characteristics make it suitable for analog signal processing, power regulation, and control applications. Sourced from a trusted IC Manufacturer, this device supports engineers and sourcing specialists in achieving optimal circuit performance with proven reliability.

JAN2N1717-Transistor Key Features

  • High current gain (hFE): Provides efficient amplification, enabling better signal integrity in low-noise applications.
  • Collector-emitter voltage rating: Supports up to 60V, allowing operation in higher voltage circuits without risk of breakdown.
  • Maximum collector current: 500mA rating ensures reliable switching and power handling for mid-range load applications.
  • Military-grade JAN (Joint Army-Navy) quality: Guarantees strict screening and lot traceability for enhanced reliability in critical systems.
  • TO-18 metal can package: Offers superior thermal dissipation and mechanical robustness compared to plastic packages.
  • Low noise figure: Ideal for sensitive analog circuits, improving overall signal-to-noise ratio.
  • Wide operating temperature range: Suitable for harsh environments, maintaining performance across -55??C to +125??C.

JAN2N1717-Transistor Technical Specifications

Parameter Value Units
Type NPN Bipolar Junction Transistor ??
Collector-Emitter Voltage (VCEO) 60 Volts
Collector-Base Voltage (VCBO) 75 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 500 mA
Power Dissipation (PC) 625 mW
Gain Bandwidth Product (fT) 70 MHz
DC Current Gain (hFE) 40 to 300 ??
Package TO-18 Metal Can ??
Operating Temperature Range -55 to +125 ??C

JAN2N1717-Transistor Advantages vs Typical Alternatives

This transistor stands out with its military-grade certification, ensuring superior reliability and traceability compared to commercial-grade alternatives. Its high collector voltage and current ratings allow operation in robust power and switching applications. The metal TO-18 package offers enhanced thermal management and mechanical durability, critical for harsh environmental conditions. Additionally, the device??s low noise figure and wide gain bandwidth make it a versatile choice for precision analog circuits, offering engineers dependable performance where accuracy and stability are essential.

Typical Applications

  • Analog signal amplification in communication and instrumentation systems, benefiting from its high gain and low noise characteristics.
  • Switching applications in control circuits requiring reliable operation at moderate currents and voltages.
  • Power regulation and driver stages within industrial electronic equipment, leveraging its robust voltage and current capabilities.
  • Military and aerospace electronics where environmental resilience and strict quality standards are mandatory.

JAN2N1717-Transistor Brand Info

The JAN2N1717 transistor is produced under strict military Joint Army-Navy (JAN) standards, reflecting a commitment to high reliability, consistency, and performance. This designation ensures that each unit undergoes thorough screening and testing, making it suitable for mission-critical applications. Manufactured with precision and quality control, this transistor embodies the heritage of trusted semiconductor suppliers who prioritize durability and operational excellence in harsh and demanding environments.

FAQ

What is the maximum collector current rating for this transistor?

The device is rated for a maximum continuous collector current of 500mA. This specification ensures it can handle moderate load currents reliably in switching and amplification circuits without exceeding thermal or electrical limits.

Can this transistor operate in high-temperature environments?

Yes, it supports an operating temperature range from -55??C up to +125??C, making it suitable for use in harsh environments such as military, aerospace, and industrial applications where temperature extremes are common.

What packaging type does this transistor use and why is it important?

This transistor comes in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical strength compared to plastic packages. This is important for efficient heat dissipation and durability in rugged applications.

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How does the gain bandwidth product affect the transistor??s performance?

The gain bandwidth product of 70 MHz indicates the frequency range over which the transistor can provide effective amplification. A higher fT allows the device to perform well in high-frequency analog and switching circuits, improving signal fidelity.

Is this transistor suitable for low-noise amplification circuits?

Yes, the transistor features a low noise figure, making it an excellent choice for sensitive analog circuits where minimizing signal noise is critical to maintaining signal clarity and accuracy.

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