JAN2N1715S-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package

JAN2N1715S-Transistor Overview

The JAN2N1715S is a rugged, military-grade NPN bipolar junction transistor designed for high-reliability and performance in demanding industrial and defense applications. Engineered to meet JAN (Joint Army-Navy) specifications, this transistor ensures consistent operation under harsh environmental conditions such as extreme temperatures and mechanical stress. Its robust construction and stable electrical characteristics make it ideal for use in amplifier circuits, switching applications, and signal processing. With guaranteed parameters for current gain, voltage, and power dissipation, the device delivers predictable performance essential for precision electronic systems. Available from IC Manufacturer, it supports critical applications requiring stringent quality and reliability standards.

JAN2N1715S-Transistor Technical Specifications

JAN2N1715S-Transistor Key Features

• Military-Grade Reliability: Designed to meet stringent JAN standards, providing dependable operation in high-stress environments for critical defense and aerospace electronics.
• Wide Operating Temperature Range: Supports functionality from -55??C to +200??C, ensuring stable performance in extreme thermal conditions common in industrial applications.
• High Current and Voltage Handling: Supports up to 1 A collector current and 60 V collector-emitter voltage, enabling robust switching and amplification tasks.
• Stable Gain Characteristics: Offers consistent DC current gain between 40 and 120, facilitating predictable circuit behavior and design accuracy.

Typical Applications

• High-reliability amplifier stages in military and aerospace communication systems, where signal integrity and ruggedness are paramount.
• Switching elements in industrial control circuits requiring durable components that withstand harsh operational conditions.
• Signal processing and interface circuits in instrumentation equipment operating over wide temperature ranges.
• Power driver circuits in electronic subsystems needing reliable transistor performance with stable gain at high frequency.

JAN2N1715S-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and environmental tolerance compared to standard commercial-grade alternatives. Its military specification compliance guarantees enhanced sensitivity and consistent current gain under extreme temperatures and mechanical stress. The robust metal can package improves heat dissipation and mechanical stability, making it a preferred choice for engineers requiring dependable performance in critical industrial and defense electronics.

JAN2N1715S-Transistor Brand Info

The JAN2N1715S is produced under strict military quality standards, traditionally associated with manufacturers specializing in defense-grade semiconductors. Devices labeled with JAN prefixes meet stringent Joint Army-Navy specifications, ensuring compliance with rigorous testing and reliability criteria. These transistors are typically sourced from established semiconductor manufacturers with decades of experience in producing high-reliability components for aerospace and defense markets. The metal can TO-39 packaging reflects industry standards for durability and thermal management, commonly provided by trusted suppliers in the military electronics sector.

FAQ

What are the key electrical characteristics of this transistor?

The device features a collector-emitter voltage rating of 60 V and supports continuous collector current up to 1 A. It has a DC current gain ranging from 40 to 120 and a transition frequency of 100 MHz, making it suitable for moderate power and high-frequency applications.

How does the transistor perform in extreme temperature environments?

It is rated for operation from -55??C to +200??C, ensuring reliable performance in harsh thermal conditions typical of