JAN2N1714S-Transistor NPN High-Speed Switching Transistor in TO-18 Metal Can Package

JAN2N1714S-Transistor Overview

The JAN2N1714S is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification tasks in industrial and military-grade electronics. Engineered to meet stringent JAN (Joint Army-Navy) standards, this transistor offers reliable operation under harsh environmental conditions, including wide temperature ranges and mechanical stress. Its rugged hermetic metal can package ensures exceptional durability and long-term stability, making it suitable for critical applications where consistent performance and dependability are paramount. This device is ideal for engineers seeking a trustworthy solution for medium power amplification and switching in demanding systems. For more detailed information, visit IC Manufacturer.

JAN2N1714S-Transistor Technical Specifications

JAN2N1714S-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 80 V, enabling use in medium power switching and amplification circuits with high voltage demands.
• Wide operating temperature range: Reliable function from -65??C to +200??C ensures suitability for military and aerospace applications exposed to extreme environments.
• Robust hermetic metal can packaging: Provides mechanical protection and moisture resistance, enhancing device longevity and preventing performance degradation.
• High current capability: Continuous collector current of 1.5 A accommodates moderate power applications while maintaining stable operation.

Typical Applications

• Switching and amplification in military and aerospace communication equipment where reliability under extreme conditions is critical.
• Industrial control systems requiring stable transistor performance in wide temperature environments.
• Power amplification stages in analog signal processing circuits with moderate power requirements.
• General-purpose transistor applications in harsh environments demanding ruggedized components.

JAN2N1714S-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and environmental resilience compared to standard commercial-grade alternatives. Its hermetic metal can package and wide temperature tolerance reduce failure risks in harsh industrial or military environments. The device??s high voltage and current ratings provide flexibility for diverse medium power applications, while maintaining consistent gain and switching performance. These characteristics make it a preferred choice for engineers prioritizing durability, accuracy, and long-term stability.

JAN2N1714S-Transistor Brand Info

The JAN2N1714S transistor is a product originally designed to meet Joint Army-Navy (JAN) standards, which ensure high reliability and performance required by military specifications. Typically manufactured by established semiconductor producers specializing in aerospace and defense-grade components, this transistor falls under a category of hermetically sealed bipolar transistors known for their ruggedness. The JAN prefix indicates adherence to strict quality control and testing procedures, making it suitable for mission-critical applications. This product continues to be utilized by engineers sourcing dependable components for high-reliability electronics.

FAQ

What is the maximum collector-emitter voltage rating of the JAN2N1714S transistor?

The maximum collector-emitter voltage (V_CEO) for this transistor is 80 volts, allowing it to handle medium power switching and amplification tasks safely within this voltage limit.

Can this transistor operate in extreme temperature environments?

Yes, it is designed to operate reliably over a wide temperature range from -65??C to +200