JAN2N1711-Transistor NPN High-Power Amplifier Transistor in TO-3 Package by JAN

JAN2N1711-Transistor Overview

The JAN2N1711 transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial and military-grade electronics. It offers reliable operation under demanding conditions, featuring a high voltage rating and significant current handling capacity. This transistor is tailored for circuits requiring precise gain control and stable thermal performance. Its construction complies with military standards, ensuring durability and consistent electrical characteristics. Ideal for high-frequency and power amplifier stages, this device supports engineers and sourcing specialists in achieving reliable and efficient system designs. For detailed technical support and sourcing information, visit IC Manufacturer.

JAN2N1711-Transistor Technical Specifications

JAN2N1711-Transistor Key Features

• High Voltage Handling: Supports up to 100 V collector-emitter voltage, enabling use in high-voltage switching and amplification circuits.
• Robust Current Capacity: Handles continuous collector currents up to 3 A, suitable for moderate power applications requiring reliable drive capability.
• Wide Operating Temperature Range: Designed to operate reliably between -65??C to +200??C, ensuring stable performance in harsh environments.
• Military-Grade Quality: Manufactured to meet stringent military standards for durability, offering enhanced reliability in mission-critical systems.
• High Gain Bandwidth Product: Provides a transition frequency of 100 MHz, allowing effective operation in high-frequency amplifier stages.
• Metal Can Package: The TO-39 hermetic metal can package offers excellent thermal conductivity and mechanical protection.

Typical Applications

• Power amplification in military communication systems, where stable gain and high voltage tolerance are essential for signal integrity.
• Switching devices in industrial control circuits, benefiting from its high current capacity and rugged design.
• High-frequency amplifiers in test and measurement equipment requiring fast response and consistent performance at elevated frequencies.
• General-purpose amplification in harsh environments such as aerospace and defense electronics, where temperature extremes and reliability are critical.

JAN2N1711-Transistor Advantages vs Typical Alternatives

This transistor outperforms many standard alternatives by combining a high voltage rating of 100 V with a substantial collector current capacity of 3 A, making it suitable for power-demanding applications. Its military-grade construction ensures superior reliability and thermal stability, especially in extreme temperature environments. The TO-39 metal can package enhances heat dissipation and mechanical robustness, providing dependable operation where typical plastic-packaged transistors might fail. These factors result in consistent gain and switching performance for critical industrial and defense applications.

JAN2N1711-Transistor Brand Info

The JAN2N1711 transistor is a military-grade component originally standardized by the Joint Army-Navy (JAN) specifications, indicating its design and testing conform to strict military quality and reliability standards. This device is typically manufactured by reputable suppliers specializing in defense and aerospace semiconductor components. The TO-39 metal can package and rigorous screening processes ensure the transistor meets the durability and electrical consistency required for mission-critical systems. Its lineage is well-regarded among engineers sourcing components for high-reliability projects, reflecting a long history of trusted performance in harsh environments.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current