JAN2N1613-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JAN2N1613-Transistor Overview

The JAN2N1613-Transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification tasks in demanding industrial and military-grade applications. Known for its reliability and consistent electrical characteristics, this transistor supports collector currents up to 10A and voltages up to 100V, making it suitable for power control and amplification circuits. It features a TO-3 metal can package ensuring excellent thermal dissipation and mechanical durability. Engineers and sourcing specialists can depend on this component for stable operation under rigorous environmental conditions. For more detailed information, visit IC Manufacturer.

JAN2N1613-Transistor Technical Specifications

JAN2N1613-Transistor Key Features

• High collector current capacity: Supports up to 10A, enabling efficient switching in power circuits, reducing the need for parallel devices.
• Robust voltage ratings: Withstands collector-emitter voltages of 100V and collector-base voltages of 120V, providing reliability in high-voltage applications.
• Thermally efficient TO-3 package: The metal can package offers superior heat dissipation, extending device lifespan and maintaining performance under thermal stress.
• Wide DC current gain range: Offers flexibility in circuit design with an hFE ranging from 20 to 70, catering to various gain requirements.

Typical Applications

• Power amplifier stages in audio and RF circuits where linearity and high current handling are critical for signal integrity and output power.
• Switching regulators and power control circuits requiring robust transistors capable of handling high collector currents and voltages.
• Industrial motor control systems where ruggedness and high thermal dissipation prevent overheating during continuous operation.
• Military and aerospace electronics demanding high reliability, mechanical durability, and stable electrical performance in harsh environments.

JAN2N1613-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage ratings compared to many standard NPN transistors, making it ideal for demanding industrial and military applications. Its TO-3 package enhances thermal management, which reduces failure rates and increases reliability. The wide current gain range allows engineers to tailor device performance precisely, improving circuit efficiency and reducing noise. These advantages provide a strong edge over typical alternatives in both durability and electrical stability.

JAN2N1613-Transistor Brand Info

The JAN2N1613 transistor is a Jan (Joint Army-Navy) qualified device, originally standardized for military use, which ensures compliance with strict quality and reliability standards. It is a product lineage associated with manufacturers specializing in rugged semiconductor devices for defense and aerospace sectors. The JAN prefix identifies it as meeting military specifications, making it well-suited for mission-critical applications requiring proven durability and stable performance under extreme conditions.

FAQ

What is the maximum collector current supported by this transistor?

This transistor supports a maximum continuous collector current of 10 amperes, allowing it to handle high power loads in various switching and amplification circuits without degradation.

What package type does the transistor use and why is it important?

The device is housed in a TO-3 metal can package, which is essential for effective heat dissipation and mechanical protection, contributing to improved reliability and long-term stability in high power applications.

Can this transistor be used in high-voltage applications?

Yes