JAN2N1484-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • It features a voltage rating that ensures stable operation under various electrical loads.
  • The compact package design supports efficient board space utilization in tight layouts.
  • Ideal for switching tasks in power management systems, enhancing overall device efficiency.
  • Manufactured with industry-standard quality processes to maintain consistent performance over time.
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JAN2N1484-Transistor Overview

The JAN2N1484 transistor is a robust bipolar junction transistor (BJT) designed for high-reliability applications requiring stable switching and amplification performance. Classified as a silicon NPN transistor, it offers dependable gain characteristics and voltage handling capabilities suitable for industrial and military-grade electronic circuits. With its sturdy construction and standardized JAN (Joint Army-Navy) designation, this device ensures enhanced durability and consistent operation under demanding environmental conditions. Engineers and sourcing specialists will find this transistor ideal for applications needing precise current control and rugged dependability. For more detailed component sourcing and technical support, visit IC Manufacturer.

JAN2N1484-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 5 A maximum
Power Dissipation (PD) 30 W
DC Current Gain (hFE) 40 to 320 (varies by test conditions)
Transition Frequency (fT) ?? 3 MHz
Package Type TO-3 Metal Can

JAN2N1484-Transistor Key Features

  • High Voltage Handling: Supports collector-emitter voltages up to 80 V, enabling use in a wide range of power switching and amplification circuits.
  • Robust Collector Current Capacity: Rated for up to 5 A, allowing reliable operation in medium-power applications without thermal failure.
  • Wide DC Current Gain Range: The hFE range from 40 to 320 provides flexibility for designing circuits with precise gain requirements.
  • Durable TO-3 Package: The metal can enclosure ensures excellent heat dissipation and mechanical protection, enhancing long-term reliability.
  • Military-Grade Quality: The JAN designation confirms strict quality and screening tests suitable for defense and aerospace applications.
  • Moderate Transition Frequency: With a frequency of approximately 3 MHz, suitable for audio-frequency amplification and low-to-mid speed switching tasks.

Typical Applications

  • Power amplification stages in audio and industrial signal processing equipment requiring stable gain and moderate frequency response.
  • Switching components in regulated power supplies and motor control circuits where high current capability and voltage tolerance are critical.
  • Military and aerospace electronic devices demanding rugged, reliable transistors with proven performance under harsh conditions.
  • General-purpose amplification and switching in industrial control systems, instrumentation, and communication devices.

JAN2N1484-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and ruggedness due to its military-grade JAN certification and TO-3 metal package, outperforming many commercial-grade alternatives. Its high voltage and current ratings provide enhanced operational headroom, while the broad DC gain range facilitates flexible circuit designs. The device??s robust thermal characteristics and standardized testing ensure consistent performance in demanding environments, making it a preferred choice for engineers prioritizing durability and precision.

JAN2N1484-Transistor Brand Info

The JAN2N1484 transistor is historically associated with manufacturers specializing in military and aerospace-grade semiconductor components. The JAN prefix denotes compliance with stringent Joint Army-Navy standards for reliability and quality. This transistor is commonly produced by legacy semiconductor manufacturers who maintain rigorous screening and testing processes to meet defense specifications. The TO-3 metal can package and detailed electrical specifications reflect a focus on durability and performance consistency for critical applications. While specific brand ownership may vary, the component remains a trusted choice in high-reliability markets.

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