JAN2N1481-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package

  • Transistor enables efficient switching and amplification, improving signal control in electronic circuits.
  • High voltage rating supports stable operation under demanding electrical conditions, ensuring device safety.
  • Compact package reduces board space, facilitating denser circuit designs and easier integration.
  • Ideal for power regulation in consumer electronics, enhancing device performance and energy management.
  • Manufactured with strict quality standards to provide consistent performance and long-term reliability.
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JAN2N1481-Transistor Overview

The JAN2N1481 transistor is a robust NPN bipolar junction transistor designed for high voltage and medium power switching applications. Engineered to provide reliable performance with a collector-emitter voltage rating of 100V and a collector current capacity up to 1.5A, this device is suitable for amplification and switching circuits in industrial environments. Its high gain and safe operating area make it a dependable choice for engineers seeking consistent transistor behavior under varied load conditions. Sourced from a trusted manufacturer, it meets stringent military and industrial standards, ensuring durability and stability in critical applications. For more detailed product data, visit IC Manufacturer.

JAN2N1481-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A (continuous)
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 (minimum)
Transition Frequency (fT) 30 MHz
Package Type TO-18 Metal Can

JAN2N1481-Transistor Key Features

  • High Voltage Handling: With a collector-emitter voltage rating of 100 V, it supports demanding switching environments without breakdown risk.
  • Robust Current Capacity: Supports continuous collector currents up to 1.5 A, enabling reliable medium power amplification and switching.
  • Stable Gain Characteristics: Minimum DC gain of 40 ensures consistent amplification performance across different operating points.
  • Thermal Reliability: Designed for a total power dissipation of 30 W, allowing sustained operation under high thermal loads.

Typical Applications

  • Industrial control circuits requiring medium power switching with high voltage tolerance, such as motor drivers and relay drivers.
  • Audio amplification stages where medium gain and power handling are essential for clear signal reproduction.
  • Signal amplification in instrumentation equipment, ensuring reliable operation in harsh industrial environments.
  • General-purpose switching applications in military and aerospace electronics, benefiting from its rugged TO-18 metal can package.

JAN2N1481-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage and current ratings compared to standard low-power transistors, providing engineers with greater design flexibility for medium power applications. The metal can package ensures improved thermal dissipation and mechanical robustness, making it more reliable under demanding conditions. Its stable gain and transition frequency support efficient switching and amplification with reduced signal distortion, outperforming many generic alternatives in reliability and consistent performance.

JAN2N1481-Transistor Brand Info

The JAN2N1481 transistor is part of a legacy series originally developed to meet military and aerospace quality standards, often produced under stringent JAN (Joint Army-Navy) specifications. Manufactured by leading semiconductor producers adhering to MIL-STD-883 test protocols, this device demonstrates high reliability and quality assurance. It is widely recognized in industrial and defense sectors for its rugged construction and dependable electrical characteristics, making it a trusted component in critical electronic assemblies.

FAQ

What is the maximum voltage this transistor can handle?

The device can withstand a maximum collector-emitter voltage of 100 volts, making it suitable for high voltage switching and amplification tasks without risk of breakdown under rated conditions.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 30 MHz, it supports moderate high-frequency operation, making it suitable for many audio and signal amplification circuits but not optimized for ultra

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