JAN1N5297-1/TR Overview
The JAN1N5297-1/TR is a high-performance silicon NPN transistor designed for robust switching and amplification applications. This discrete semiconductor device offers reliable operation with a maximum collector-emitter voltage rating of 80 V and a collector current capacity of up to 1 A, making it suitable for medium-power industrial circuits. The transistor??s complementary characteristics include low saturation voltage and stable gain, which ensure efficient signal amplification and switching speed. Its standardized TO-18 metal can package supports excellent thermal dissipation, enhancing long-term reliability under diverse operating conditions. This product is available through IC Manufacturer and is optimized for engineers requiring consistent, rugged components in demanding environments.
JAN1N5297-1/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (continuous) |
| Power Dissipation (Ptot) | 625 mW (at 25??C) |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JAN1N5297-1/TR Key Features
- High voltage tolerance: Supports collector-emitter voltages up to 80 V, enabling use in circuits requiring medium voltage switching and amplification.
- Robust current handling: With a collector current rating of 1 A, it is well-suited to drive loads in industrial control and power management applications.
- Wide gain range: The device provides a DC current gain between 40 and 160, allowing flexible designs across a variety of amplifier stages.
- Thermally stable packaging: The TO-18 metal can package facilitates effective heat dissipation, enhancing device reliability under continuous operation.
- Fast switching capability: A typical transition frequency of 100 MHz supports high-speed switching tasks in communication or signal processing circuits.
JAN1N5297-1/TR Advantages vs Typical Alternatives
This transistor offers a superior balance of voltage capacity and current handling compared to typical low-power alternatives, making it ideal for medium-power industrial applications. Its metal can packaging delivers enhanced thermal performance and mechanical robustness, which increases reliability under harsh conditions. The wide gain range and fast switching frequency provide design flexibility and improved efficiency, characteristics often limited in standard plastic-encapsulated transistors.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- General purpose amplification and switching in industrial control systems, where reliable medium-power transistor operation is essential to maintain system stability and performance.
- Signal processing circuits requiring medium gain and fast switching for data communication interfaces.
- Power management circuits, including driver stages for relays and solenoids, benefiting from the device??s 1 A collector current capability.
- Automotive electronic systems needing rugged and thermally stable components to withstand varying temperature and electrical conditions.
JAN1N5297-1/TR Brand Info
The JAN1N5297-1/TR is part of a family of military-grade transistors known for their ruggedness and reliability. Manufactured with stringent quality controls, this device is designed to meet demanding industrial and aerospace standards. The brand emphasizes durable, high-performance components that ensure long-term operation in challenging environments. This product is sourced from trusted suppliers specializing in high-quality discrete semiconductors, ideal for engineers prioritizing dependable and consistent device characteristics.
FAQ
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage rating is 80 volts, allowing the device to operate safely within medium-voltage applications such as industrial control circuits without risking breakdown.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can this transistor handle continuous high current loads?
Yes, it supports continuous collector currents up to 1 ampere, making it suitable for driving moderate loads such as relays, motors, or other power devices commonly found in industrial systems.
What packaging does this transistor come in and why is it important?
This transistor is housed in a TO-18 metal can package, which enhances thermal dissipation and mechanical durability, ensuring reliable operation in environments with temperature fluctuations and mechanical stress.
📩 Contact Us
How does the device??s current gain impact circuit design?
The current gain ranges from 40 to 160, providing flexibility in designing amplifier stages or switching circuits. This range allows engineers to select appropriate biasing and load conditions for optimal performance.
Is this transistor suitable for high-frequency applications?
With a typical transition frequency of 100 MHz, this transistor supports fast switching and moderate high-frequency operation, making it useful in signal processing and communication circuits requiring rapid response times.
