JAN1N5295-1/TR Overview
The JAN1N5295-1/TR is a high-performance silicon NPN transistor designed for switching and amplification applications in industrial and military-grade electronics. It delivers robust current handling and reliable operation across a wide temperature range, making it suitable for demanding environments. Optimized for low noise and high gain, this transistor supports efficient signal processing and power management tasks. Its sturdy construction ensures consistent performance and long-term durability, meeting rigorous quality standards. Engineers and sourcing specialists rely on this device for precision and dependable functionality provided by IC Manufacturer.
JAN1N5295-1/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Silicon Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 1.5 A |
| Power Dissipation (Ptot) | 1 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 40 to 320 |
| Transition Frequency | 100 MHz |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | TO-18 Metal Can |
JAN1N5295-1/TR Key Features
- High voltage handling: Supports up to 100 V collector-emitter voltage, enabling use in robust switching applications requiring significant voltage tolerance.
- Strong current capability: Collector current rating of 1.5 A ensures reliable operation in medium power circuits without thermal stress.
- Wide operating temperature range: Functional from -55??C to +150??C, this transistor suits harsh industrial and military environments.
- High gain bandwidth product: With 100 MHz frequency, it supports high-speed switching and amplification, improving overall circuit response.
- Durable TO-18 packaging: The metal can package provides excellent thermal dissipation and mechanical stability for extended reliability.
JAN1N5295-1/TR Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to typical small-signal transistors, enhancing reliability in power-intensive applications. Its wide temperature tolerance and rugged metal can package provide excellent durability under extreme conditions. High gain and bandwidth parameters contribute to efficient amplification and switching performance, making it a preferred choice over standard plastic-encapsulated devices where robustness and precision are critical.
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Typical Applications
- Industrial control circuits requiring reliable medium power switching with stable gain and temperature resilience, such as motor drivers and solenoid controllers.
- Military electronics where device ruggedness and performance consistency are mandatory across wide environmental conditions.
- Signal amplification stages in communication equipment benefiting from high gain and low noise characteristics.
- Power management circuits in instrumentation and measurement systems demanding precision and durability.
JAN1N5295-1/TR Brand Info
This transistor is produced under the stringent quality and reliability standards of its manufacturer, known for delivering high-grade semiconductor components tailored for industrial and defense sectors. The product line emphasizes durability, consistent electrical performance, and compliance with military specifications where applicable. This ensures dependable operation in critical systems, reflecting the manufacturer??s commitment to excellence in semiconductor technology.
FAQ
What is the maximum collector-emitter voltage rating of this transistor?
The device supports a maximum collector-emitter voltage of 100 V, allowing it to operate safely in circuits with relatively high voltage demands without risk of breakdown.
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Can this transistor handle high current loads?
Yes, it is rated for a maximum collector current of 1.5 A, making it suitable for medium power switching and amplification applications where reliable current handling is essential.
What temperature range does this transistor support?
It operates reliably across a wide temperature range from -55??C to +150??C, making it suitable for use in harsh industrial and military environments where temperature extremes are common.
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What type of packaging is used for this transistor, and why is it important?
The device uses a TO-18 metal can package, which offers excellent thermal dissipation and mechanical robustness. This enhances reliability and longevity, especially in demanding operating conditions.
Is this transistor suitable for high-frequency applications?
Yes, with a gain bandwidth product of 100 MHz, it supports high-speed switching and amplification, making it effective for applications requiring fast response times and low signal distortion.
