JAN1N5290UR-1/TR Overview
The JAN1N5290UR-1/TR is a high-performance silicon planar diode designed for efficient switching and rectification in industrial and military-grade applications. This device offers a robust peak repetitive reverse voltage of 90V and a forward current rating suitable for demanding environments. Engineered for reliability and ruggedness, the product ensures stable operation over a broad temperature range. Its hermetically sealed metal can package supports enhanced thermal dissipation and mechanical durability, making it ideal for harsh conditions. Available through IC Manufacturer, this diode is tailored to meet stringent quality and performance standards required by engineers and sourcing specialists alike.
JAN1N5290UR-1/TR Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 90 | V |
| Average Forward Current (IF(AV)) | 1.0 | A |
| Forward Voltage Drop (VF) at 1A | 1.0 (Typ.) | V |
| Reverse Current (IR) at VRRM | 50 | ??A |
| Junction Temperature Range (TJ) | -65 to +200 | ??C |
| Storage Temperature Range (TSTG) | -65 to +200 | ??C |
| Reverse Recovery Time (trr) | 35 | ns |
| Package Type | Hermetically Sealed Metal Can (TO-18) | ?C |
JAN1N5290UR-1/TR Key Features
- High Peak Repetitive Reverse Voltage: Supports up to 90 volts, enabling safe operation in circuits subject to voltage spikes and transient conditions.
- Low Forward Voltage Drop: Minimizes power loss during conduction, improving overall circuit efficiency and reducing thermal stress on components.
- Fast Reverse Recovery Time: 35 nanoseconds typical recovery ensures minimal switching losses, ideal for high-frequency applications.
- Wide Junction Temperature Range: Operates reliably from -65??C to +200??C, suitable for harsh industrial and military environments.
- Hermetically Sealed Package: Enhances protection against moisture, dust, and mechanical damage, ensuring long-term reliability and stable electrical performance.
JAN1N5290UR-1/TR Advantages vs Typical Alternatives
This diode excels over typical alternatives by combining robust voltage handling with a rapid recovery time, which reduces switching losses in power circuits. Its hermetically sealed metal can package provides superior environmental protection and thermal performance compared to plastic-encapsulated diodes. The broad operating temperature range enhances reliability in extreme conditions, making it a preferred choice for aerospace, defense, and industrial power applications where durability and precision are critical.
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Typical Applications
- Switching and rectification in high-reliability power supplies used in defense and aerospace systems, where consistent performance under temperature extremes is essential.
- Industrial motor control circuits requiring fast recovery diodes to improve efficiency and reduce electromagnetic interference.
- Signal demodulation and protection circuits in communication equipment operating in harsh environments.
- General purpose rectification in military-grade electronic assemblies demanding ruggedness and long-term stability.
JAN1N5290UR-1/TR Brand Info
The JAN1N5290UR-1/TR is a product from a trusted semiconductor manufacturer specializing in high-reliability components for industrial and military applications. This diode series adheres to stringent quality standards and is produced under controlled processes to ensure consistent electrical characteristics and mechanical robustness. The brand??s reputation is built on delivering devices that withstand extreme operating conditions while providing precise and predictable performance, making this diode a dependable solution for engineers sourcing components for critical systems.
FAQ
What makes the JAN1N5290UR-1/TR suitable for military and aerospace applications?
This diode??s hermetically sealed metal can package offers exceptional protection against environmental factors such as moisture and contaminants. Additionally, its wide junction temperature range from -65??C to +200??C ensures reliable operation under the thermal stresses commonly found in military and aerospace environments.
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How does the forward voltage drop impact circuit efficiency?
A lower forward voltage drop reduces the power dissipation within the diode when conducting current. This directly improves overall circuit efficiency, decreases heat generation, and enhances the longevity of both the diode and surrounding components.
Why is reverse recovery time important in switching applications?
Reverse recovery time determines how quickly a diode can switch from conducting to blocking state. A fast recovery time minimizes switching losses and reduces electromagnetic interference, which is critical in high-frequency power conversion and signal processing circuits.
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Can this diode handle continuous operation at high currents?
The device supports an average forward current of 1 ampere, which allows continuous operation in many power supply and control applications. Proper thermal management is recommended to maintain junction temperature within specified limits for reliable performance.
What packaging benefits does the TO-18 metal can provide?
The TO-18 metal can package offers superior mechanical strength and thermal conductivity compared to plastic packages. It protects the diode die from physical damage and environmental degradation while facilitating efficient heat dissipation, critical for high-reliability applications.
