ISC037N12NM6ATMA1 Power MOSFET, 1200V, TO-247 Package, Infineon Transistor

  • Designed for sensing applications, this component enables reliable object detection in automation systems.
  • Features a robust NPN output type, ensuring compatibility with standard industrial control equipment.
  • The compact package helps save valuable board space in densely populated control panels.
  • Widely used in conveyor systems, it helps increase operational efficiency by detecting product presence accurately.
  • Manufactured to support consistent performance, reducing maintenance needs over long-term operation.
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ISC037N12NM6ATMA1 Overview

The ISC037N12NM6ATMA1 is a high-performance N-channel MOSFET optimized for demanding industrial and power management applications. Featuring a 120V maximum drain-source voltage rating and robust 37A continuous drain current, this device delivers efficient switching and low power losses in compact designs. Its advanced trench technology ensures minimal RDS(on) and enhanced thermal management, making it a preferred choice for engineers seeking reliable and scalable solutions. For more details on electronic components, visit IC Manufacturer.

ISC037N12NM6ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)120V
Continuous Drain Current (ID)37A
RDS(on) (Max)12 m??
Gate Charge (Qg)74 nC
PackageSuperSO8
Mounting TypeSurface Mount (SMD/SMT)
Operating Temperature Range-55??C to +175??C

ISC037N12NM6ATMA1 Key Features

  • Low On-State Resistance: The device??s RDS(on) of 12 m?? ensures minimal conduction losses, improving overall system efficiency, especially in high-current designs.
  • High Current Handling: With a capability of 37A continuous drain current, this MOSFET supports robust load demands for power conversion and switching applications.
  • Thermal Performance: The wide operating temperature range from -55??C to +175??C allows reliable operation in harsh industrial and automotive environments.
  • Compact SuperSO8 Package: The surface-mount package enables high-density PCB layouts and facilitates automated assembly processes.
  • Fast Switching: Optimized gate charge (74 nC) supports rapid switching transitions, enabling higher system frequencies and reducing switching losses.

ISC037N12NM6ATMA1 Advantages vs Typical Alternatives

Compared to standard N-channel MOSFETs, this device delivers lower RDS(on) and higher drain current in a compact SuperSO8 package, resulting in superior efficiency and reliability. Its wide operating temperature range and fast switching capability make it an optimal choice for engineers prioritizing power density and robust system integration.

Typical Applications

  • DC-DC Power Conversion: Ideal for use in synchronous rectification, DC-DC converters, and switching power supplies demanding efficient energy transfer and low conduction losses.
  • Motor Control: Suitable for industrial and automotive motor drives, providing fast switching and high current handling for precise and reliable operation.
  • Load Switching: Widely used in high-current load switches and power distribution modules where thermal performance is critical.
  • Battery Management Systems: Effective in battery protection circuits, balancing, and charging systems, delivering consistent performance across wide temperature ranges.

ISC037N12NM6ATMA1 Brand Info

ISC037N12NM6ATMA1 is manufactured by a leading supplier specializing in advanced semiconductor devices for power management and industrial electronics. This component reflects the brand??s focus on high-efficiency, robust MOSFET solutions, supporting demanding applications where reliability and performance are paramount. Its engineering targets designers seeking compact, high-current, and thermally-resilient N-channel MOSFETs for next-generation systems.

FAQ

What advantages does the SuperSO8 package bring to the ISC037N12NM6ATMA1?

The SuperSO8 package offers a compact footprint, allowing for high-density PCB layouts and streamlined automated assembly. This results in reduced board space, efficient thermal dissipation, and simplified integration into modern electronic systems.

Is this MOSFET suitable for harsh or elevated temperature environments?

Yes, the ISC037N12NM6ATMA1 supports a broad operating temperature range from -55??C up to +175??C, making it highly reliable for use in demanding industrial, automotive, and power management environments where thermal stress is a concern.

How does the low RDS(on) value benefit power electronics applications?

A low RDS(on) (12 m?? max) translates to lower conduction losses, improved efficiency, and reduced heat generation. This is especially valuable in high-current circuits, such as DC-DC converters and synchronous rectifiers.

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What types of circuits are best suited for this MOSFET?

This device is ideal for high-current, high-frequency switching applications including DC-DC converters, motor controllers, load switches, and battery management systems, thanks to its fast switching and robust current capabilities.

Is surface mount assembly supported for this part?

Yes, the ISC037N12NM6ATMA1 is designed for surface mount applications, leveraging the SuperSO8 package for easy integration into automated assembly lines and modern PCB layouts.

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