ISC022N10NM6ATMA1 Overview
The ISC022N10NM6ATMA1 is a high-performance N-channel MOSFET designed to meet the demanding requirements of modern industrial and power management applications. Engineered for low on-resistance and fast switching, this device ensures efficient power conversion and thermal management. Its advanced trench technology and robust build make it suitable for use in compact, high-density circuit designs. For more details and sourcing, visit IC Manufacturer.
ISC022N10NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 22 A |
| RDS(on) (Max) | 22 m?? |
| Gate Charge (Qg) | 21 nC |
| Package Type | SuperSO8 |
| Technology | OptiMOS? 6 Trench Technology |
| Operating Temperature Range | -55??C to 150??C |
ISC022N10NM6ATMA1 Key Features
- Low RDS(on) of 22 m?? ensures minimal conduction losses, which improves overall system efficiency in power conversion circuits.
- High drain-source voltage rating of 100 V enables reliable operation in demanding industrial and automotive environments.
- Optimized gate charge (21 nC) allows for fast switching, supporting high-frequency operation and reducing power dissipation.
- Robust SuperSO8 package with advanced OptiMOS? 6 trench technology delivers superior thermal performance and enhanced reliability in compact layouts.
ISC022N10NM6ATMA1 Advantages vs Typical Alternatives
This MOSFET stands out due to its combination of low on-resistance and fast switching attributes, resulting in lower power losses and efficient thermal management. The use of advanced trench technology and a compact SuperSO8 package further improves integration and durability compared to standard alternatives, making it ideal for high-efficiency, space-constrained designs.
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Typical Applications
- DC-DC converters: Ideal for use in synchronous rectification and power management circuits, where high efficiency and low conduction losses are essential for reliable system performance.
- Switching power supplies: Well-suited for industrial power supplies requiring robust N-channel MOSFETs with low RDS(on) and fast switching characteristics.
- Motor drives: Can be utilized in low-voltage motor control circuits, providing efficient switching and reliable handling of high currents.
- Automotive electronic systems: Suitable for power distribution and load switching in automotive ECUs and control modules, thanks to its high voltage and current handling capabilities.
ISC022N10NM6ATMA1 Brand Info
The ISC022N10NM6ATMA1 is part of the OptiMOS? 6 portfolio, recognized for its advanced trench MOSFET technology. This device is specifically designed to address the needs of high-performance industrial and automotive sectors, offering a balance of efficiency, reliability, and compactness. Its SuperSO8 package and proven process technology ensure long-term performance and simplified integration into a variety of power architectures.
FAQ
What are the main benefits of using this MOSFET in high-frequency switching applications?
The optimized gate charge and low on-resistance support fast, efficient switching with reduced power loss. This is particularly advantageous for high-frequency DC-DC converters and switching power supplies, where efficiency and thermal performance are critical.
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Can the device handle automotive voltage levels safely?
With a drain-source voltage rating of 100 V and a robust SuperSO8 package, the device is capable of handling automotive system voltages and transients, making it suitable for a wide range of automotive power distribution and control applications.
How does the SuperSO8 package benefit thermal management?
The SuperSO8 package provides enhanced heat dissipation and allows for higher current handling within a compact footprint. This leads to improved reliability and longer service life in demanding operating environments.
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Is the device appropriate for use in motor drive applications?
Yes, its high current rating and fast switching characteristics make it an excellent choice for low-voltage motor drives, where efficiency and reliable high-speed operation are required.
What differentiates this MOSFET??s trench technology from conventional designs?
The advanced OptiMOS? 6 trench technology delivers lower on-resistance and faster switching speeds compared to traditional planar MOSFETs, enabling better energy efficiency and reduced heat generation in power electronic systems.
