IRLL014NTRPBF Overview
The IRLL014NTRPBF is a high-efficiency, N-channel MOSFET optimized for low on-resistance and fast switching in compact power management solutions. With its miniature SOT-23 surface mount package and advanced silicon technology, this MOSFET is engineered to deliver robust performance in demanding applications such as DC-DC converters, load switches, and level shifters. The device??s low gate drive requirements and high-speed switching capability make it ideal for modern, space-constrained designs. For more details or sourcing options, visit IC Manufacturer.
IRLL014NTRPBF Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Package / Case | SOT-23 (Surface Mount) |
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 1.7A |
| RDS(on) (Max) | 0.14 ?? @ 4.5V VGS |
| Gate-Source Voltage (VGS) | ?I20V |
| Power Dissipation (PD) | 1.25W |
| Operating Temperature Range | -55??C to +150??C |
IRLL014NTRPBF Key Features
- Ultra-low RDS(on) enables high efficiency by minimizing conduction losses in power conversion circuits.
- Compact SOT-23 package allows for space-saving board layouts, essential for dense or portable electronics.
- Fast switching performance reduces switching losses and improves response time in high-frequency circuits.
- Wide gate-source voltage tolerance enhances design flexibility for various logic-level and standard-level drive schemes.
IRLL014NTRPBF Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its low RDS(on) and high-speed switching properties, delivering improved efficiency and reduced heat generation compared to standard transistors. Its small SOT-23 footprint enables greater integration and design flexibility, making it a superior choice for compact, high-performance applications where power density and reliability are critical.
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Typical Applications
- DC-DC converters: Used for switching and power management in compact voltage regulation circuits, benefiting from low conduction and switching losses.
- Load switching: Suitable for on/off switching of electronic subsystems or peripherals, with minimal board space requirements.
- Level shifting: Efficiently interfaces logic signals between different voltage domains in microcontroller or mixed-signal systems.
- Motor driver circuits: Acts as a low-impedance switch for small DC motors or solenoids in portable or battery-powered applications.
IRLL014NTRPBF Brand Info
This device is part of a renowned MOSFET portfolio known for delivering reliable, high-efficiency solutions in space-constrained designs. Specifically, this product is engineered to address the needs of engineers seeking compact, rugged, and versatile MOSFETs for modern power and signal management applications. Its proven silicon process and industry-standard SOT-23 packaging ensure compatibility and ease of integration in a wide range of industrial and consumer electronics.
FAQ
What makes the IRLL014NTRPBF suitable for compact designs?
The SOT-23 surface mount package offers a very small footprint, making it ideal for densely populated PCBs where board area is at a premium. This allows engineers to optimize space without sacrificing reliable switching performance.
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How does the low RDS(on) value benefit power management circuits?
Lower RDS(on) results in less voltage drop and reduced power loss during conduction, which directly translates to higher efficiency and lower heat generation in power conversion or switching applications.
Can this MOSFET be used in high-speed switching applications?
Yes, the device??s fast switching capability makes it well suited for high-frequency circuits, enabling quick response times and efficient operation in demanding environments such as DC-DC converters and pulse-width modulation systems.
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What is the maximum voltage the gate can tolerate?
The gate-to-source voltage is rated for up to ?I20V, providing robust tolerance for a wide variety of logic-level and standard-level drive circuits, enhancing system design flexibility.
Is the IRLL014NTRPBF suitable for temperature-critical environments?
With an operating temperature range from -55??C to +150??C, this MOSFET is designed for reliable operation in both extreme cold and high-temperature conditions, making it suitable for industrial and automotive applications.
