IRFS3306TRLPBF N-Channel MOSFET 60V 120A TO-263 Power Transistor

  • Serves as a power MOSFET, enabling efficient switching and amplification in electronic circuits.
  • Low on-resistance reduces conduction losses, improving overall energy efficiency in demanding applications.
  • TO-263AB package offers a compact footprint, allowing for board-space savings in dense layouts.
  • Ideal for use in motor drive circuits, where it helps achieve better control and thermal management.
  • Manufactured to meet rigorous industry standards, supporting consistent performance and operational reliability.
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IRFS3306TRLPBF Overview

The IRFS3306TRLPBF is a high-performance N-channel MOSFET designed for demanding power management and switching applications. Engineered to deliver exceptional efficiency and low conduction losses, this rugged device supports high-speed operation and robust thermal performance. Its optimized packaging and RDS(on) characteristics make it a preferred choice for applications such as motor drives, DC-DC converters, and industrial power systems. With superior switching behavior and reliability, this MOSFET enables designers to achieve compact, energy-efficient solutions for modern electronics. For detailed sourcing and manufacturer support, visit IC Manufacturer.

IRFS3306TRLPBF Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)120A
RDS(on) (Max)2.3 m??
Gate Charge (Qg)160 nC
Power Dissipation (PD)300W
Package / CaseTO-263 (D2PAK)
Mounting TypeSurface Mount
Operating Temperature Range-55??C to +175??C

IRFS3306TRLPBF Key Features

  • Ultra-low RDS(on): Minimizes conduction losses, resulting in higher overall system efficiency and reduced heat generation in power switching designs.
  • High Current Capability: Supports continuous drain currents up to 120A, making it ideal for heavy-load applications and robust power delivery requirements.
  • Fast Switching Performance: Optimized gate charge ensures rapid switching, which is critical for high-frequency applications and improves overall power conversion efficiency.
  • Thermally Enhanced Package: The TO-263 (D2PAK) surface-mount package facilitates efficient heat dissipation, supporting reliable operation even in thermally demanding environments.

IRFS3306TRLPBF Advantages vs Typical Alternatives

This advanced N-channel MOSFET stands out due to its ultra-low RDS(on) and high current handling, which translate to superior energy efficiency and reduced thermal stress compared to standard alternatives. Its fast switching capability and surface-mount TO-263 packaging offer further integration advantages and reliability for industrial and automotive power designs. Engineers benefit from improved performance, lower losses, and robust operation.

Typical Applications

  • DC-DC Converters: The device??s low RDS(on) and high current capability make it a strong fit for efficient DC-DC power supplies, reducing losses and improving overall power delivery in industrial and telecom systems.
  • Motor Drives: High current handling and reliable switching performance enable robust operation in electric motor drive circuits and industrial automation equipment.
  • Power Management Modules: Used in high-efficiency power management and load switching applications, ensuring consistent operation in demanding environments.
  • Battery Management Systems: This MOSFET supports safe, low-loss switching in battery protection and charging circuits for energy storage and renewable energy solutions.

IRFS3306TRLPBF Brand Info

The IRFS3306TRLPBF is designed and manufactured by a globally recognized leader in power semiconductor technologies. This product embodies the brand??s commitment to high efficiency, thermal robustness, and reliable switching in challenging environments. Its engineering focuses on delivering optimal performance for industrial, automotive, and energy applications, making it a trusted choice for professionals requiring quality, consistency, and superior electrical characteristics.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device supports a maximum drain-source voltage of 60V, making it suitable for a wide range of medium-voltage power management and switching applications in industrial and automotive sectors.

How does the low RDS(on) value benefit my application?

The ultra-low RDS(on) of 2.3 m?? significantly reduces conduction losses during operation. This results in higher efficiency, less heat generation, and improved reliability for power switching circuits.

Which package type is used, and what are its advantages?

The MOSFET comes in a TO-263 (D2PAK) surface-mount package. This format is favored for its excellent thermal performance, compact footprint, and ease of integration into automated PCB assembly processes.

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Is this component suitable for high-current applications?

Yes, it supports continuous drain currents up to 120A. This makes it well-suited for high-power applications such as motor controls, industrial power supplies, and battery management systems.

What is the recommended operating temperature range for reliable operation?

The device is rated for operation from -55??C to +175??C, ensuring stable performance and reliability even in harsh industrial or automotive environments where temperature extremes are common.

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