IRFP2907PBF Overview
The IRFP2907PBF is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. With robust voltage and current handling capabilities, it delivers reliable switching performance and efficient energy management in a variety of electronic circuits. Its advanced silicon technology and package design provide superior thermal performance and low conduction losses, making it a preferred choice for engineers focused on efficiency and reliability. To learn more about this component and other semiconductor solutions, visit IC Manufacturer.
IRFP2907PBF Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 75V |
| Continuous Drain Current (ID) | 209A |
| RDS(on) (Max) | 3.3 m?? |
| Gate-Source Voltage (VGS) | ?I20V |
| Power Dissipation (PD) | 520W |
| Package / Case | TO-247AC |
| Operating Temperature Range | -55??C to +175??C |
| Lead Free Status | RoHS Compliant, Pb-free |
IRFP2907PBF Key Features
- Low RDS(on) of 3.3 m?? enables minimal conduction loss, enhancing overall system efficiency in high-current applications.
- High continuous drain current rating of 209A makes it suitable for demanding power switching environments, supporting robust load handling.
- Wide operating temperature range from -55??C to +175??C ensures reliable performance in industrial and harsh ambient conditions.
- TO-247AC package provides efficient heat dissipation, supporting higher power density and simplified thermal management.
- RoHS compliance and Pb-free construction meet global environmental and regulatory requirements, supporting sustainable design initiatives.
IRFP2907PBF Advantages vs Typical Alternatives
This N-channel MOSFET offers a combination of low on-resistance and high current handling, resulting in lower switching losses and improved thermal efficiency compared to standard alternatives. Its robust voltage and current ratings, along with RoHS compliance, make it a reliable and environmentally conscious choice for designs requiring efficient power conversion and precise switching control.
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Typical Applications
- High-efficiency DC-DC converters and power supplies, where minimized conduction losses and high current capacity are critical for reliable operation and reduced heat generation.
- Motor drive circuits in industrial automation, robotics, and electric vehicles, supporting fast switching and robust load management.
- Uninterruptible power supplies (UPS) and inverters, benefitting from the device??s high power dissipation and thermal robustness.
- Switching regulators and battery-powered equipment, leveraging the device??s efficiency and reliability to optimize system performance and battery life.
IRFP2907PBF Brand Info
The IRFP2907PBF is part of a trusted portfolio of power MOSFETs designed to deliver industry-leading performance for high-current, low-voltage applications. With a focus on reliability, efficiency, and compliance with modern environmental standards, this device is engineered to meet the needs of professionals in power electronics, industrial control, and energy management sectors. Its robust design and advanced packaging reflect the manufacturer??s commitment to quality and innovation in the field of semiconductor devices.
FAQ
What are the key benefits of using this MOSFET in power supply design?
The device??s low on-resistance and high current capacity allow for reduced conduction losses and efficient heat management, enabling compact and energy-efficient power supply designs. Its robust thermal performance ensures reliability even under high-load conditions.
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Is this device suitable for use in harsh or industrial environments?
Yes, the broad operating temperature range from -55??C to +175??C and the rugged TO-247AC package make it well-suited for demanding industrial and outdoor environments, ensuring consistent performance across a wide range of conditions.
How does this device contribute to environmentally friendly designs?
With RoHS compliance and a lead-free (Pb-free) construction, the device meets strict environmental regulations, enabling designers to build products that align with global sustainability and safety standards.
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Can this MOSFET be used in high-frequency switching applications?
Its advanced silicon technology and low RDS(on) make it appropriate for high-frequency switching, helping to minimize switching losses and support efficient, responsive power conversion in dynamic circuits.
What type of package is used and why is it important?
The TO-247AC package offers excellent heat dissipation and mechanical stability, which is crucial for high-power applications. This allows engineers to achieve higher power densities and simplifies the design of thermal management solutions.
