IRFB4310PBF N-Channel MOSFET Transistor, TO-220 Package, Power Amplifier

  • Serves as an N-channel MOSFET, ideal for efficient high-speed switching in power circuits.
  • Features a TO-220AB package, enabling straightforward mounting and thermal management on PCBs.
  • Compact design allows for flexible integration in space-constrained electronic assemblies.
  • Commonly used in motor control systems, helping to minimize conduction losses during operation.
  • Manufactured to support consistent performance and durability in demanding environments.
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IRFB4310PBF Overview

The IRFB4310PBF is a high-performance N-channel MOSFET engineered for demanding power management and switching applications. Designed with advanced silicon technology, this device delivers low on-resistance and high-speed switching, making it ideal for use in industrial motor drives, power supplies, and DC-DC converters. Its robust TO-220AB package ensures reliable thermal performance and ease of mounting on PCBs or heatsinks. With a balance of efficiency, ruggedness, and cost-effectiveness, the IRFB4310PBF is a trusted discrete component for engineers requiring both reliability and superior electrical characteristics. Explore further at IC Manufacturer.

IRFB4310PBF Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)71A
RDS(on) (max)0.008 ??
Gate-Source Voltage (VGS)?I20V
Total Gate Charge (Qg)140 nC
Power Dissipation (PD)200W
PackageTO-220AB
Operating Temperature Range-55??C to +175??C

IRFB4310PBF Key Features

  • Low On-Resistance: With an RDS(on) of just 0.008 ??, this MOSFET minimizes conduction losses, improving system efficiency in high-current circuits.
  • High Current Handling: Rated for 71A continuous drain current, it enables robust switching and control in demanding power applications.
  • Fast Switching Capability: The low total gate charge (140 nC) supports rapid switching transitions, reducing switching losses and enabling higher frequency operation.
  • Wide Safe Operating Area: The device??s TO-220AB package and thermal characteristics allow for high power dissipation and reliable thermal management.
  • Ruggedness: Designed to operate from -55??C up to +175??C, it is well suited for harsh industrial environments and challenging thermal conditions.

IRFB4310PBF Advantages vs Typical Alternatives

This MOSFET stands out due to its exceptionally low on-resistance and high current capability, enabling superior efficiency and reduced heat generation compared to standard alternatives. Its robust package and broad operating temperature range enhance system reliability and flexibility, making it a preferred choice for designers targeting high-performance, energy-efficient power switching and conversion solutions.

Typical Applications

  • Switch Mode Power Supplies (SMPS): Commonly used in high-efficiency AC-DC and DC-DC converters, the device??s low RDS(on) and fast switching reduce losses and improve overall system performance, making it well suited for compact, high-power supply designs.
  • Motor Drive Circuits: Its high current rating and voltage withstand capability support reliable operation in industrial and commercial motor control applications.
  • Battery Management Systems: Used for battery protection and switching in energy storage, automotive, and backup power systems, where efficiency and robustness are critical.
  • Uninterruptible Power Supplies (UPS): Ensures reliable switching and power delivery in backup and emergency power systems, benefiting from its high efficiency and rugged design.

IRFB4310PBF Brand Info

The IRFB4310PBF is produced by a leading manufacturer recognized for innovation in power semiconductor devices. This MOSFET leverages advanced process technology to deliver outstanding performance and reliability in both industrial and commercial environments. Its TO-220AB package and qualified, lead-free status meet modern compliance and sustainability requirements, supporting global applications in energy conversion, motor control, and high-efficiency power systems. This device exemplifies the brand??s commitment to quality and engineering excellence.

FAQ

What is the maximum drain-source voltage for the IRFB4310PBF?

The maximum drain-source voltage rating is 100V. This allows the device to be used in a wide variety of power switching and conversion applications where voltage transients and high operating voltages are common.

How much continuous current can this MOSFET handle?

The device supports a continuous drain current of up to 71A under specified conditions. This high current capability makes it suitable for demanding loads such as high-power motors, power supplies, and inverter circuits.

What package does the IRFB4310PBF use?

It is supplied in a TO-220AB package, which provides excellent thermal performance and ease of mounting. This package type is widely used in power electronics for its reliability and ability to dissipate heat effectively.

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Is the IRFB4310PBF suitable for high-frequency switching?

Yes, with a total gate charge of 140 nC, this device is well-suited for applications requiring fast switching speeds, such as switch mode power supplies or high-frequency DC-DC converters, where minimal switching losses are essential.

What is the recommended operating temperature range?

The recommended operating temperature range is from -55??C to +175??C. This wide range allows for use in both standard and harsh environments, ensuring reliable performance in industrial, automotive, and energy applications.

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