IRF630 N-Channel MOSFET Transistor, 9A 200V, TO-220 Package by International Rectifier

IRF630 Overview

The IRF630 is a robust N-channel power MOSFET designed for efficient switching and amplification in industrial and consumer electronics. Its high voltage and current handling capabilities make it suitable for power management, motor control, and general-purpose switching applications. With a maximum drain-to-source voltage of 200V and continuous drain current up to 9A, this device delivers reliable performance in demanding environments. The low gate charge and fast switching speed optimize power efficiency, reducing energy loss in power conversion circuits. For trusted sourcing, visit IC Manufacturer.

IRF630 Technical Specifications

IRF630 Key Features

• High voltage rating: Supports up to 200V drain-to-source voltage, enabling use in a wide range of power circuits requiring robust voltage tolerance.
• Significant current capacity: Handles continuous drain current of 9A, allowing efficient conduction in medium-power applications without excessive heat generation.
• Low on-resistance (R_DS(on)): Minimizes conduction losses, improving overall efficiency and thermal performance in switching operations.
• Fast switching speed: Low gate charge facilitates rapid switching, reducing switching losses and enhancing performance in PWM and inverter circuits.

Typical Applications

• Power supply switching regulators: Ideal for use in DC-DC converters and linear regulators where efficient voltage control and power handling are critical.
• Motor control circuits: Suitable for driving motors in industrial automation and consumer appliances due to robust current and voltage ratings.
• Audio amplifiers: Used in power amplifier stages requiring high voltage swing and low distortion switching performance.
• Inverter circuits: Effective in solar inverters and UPS systems for reliable power conversion under varying load conditions.

IRF630 Advantages vs Typical Alternatives

This MOSFET offers a balanced combination of high voltage tolerance and moderate current capacity, making it advantageous for engineers requiring reliable switching with low conduction losses. Its low gate charge and fast switching capability provide higher efficiency compared to generic power transistors. The TO-220 package facilitates effective heat dissipation and straightforward PCB integration, enhancing system reliability and ease of maintenance.

IRF630 Brand Info

The IRF630 is a widely recognized MOSFET originally developed by International Rectifier, a pioneer in power semiconductor technology. Today, it is manufactured by several established semiconductor companies under license or as a standard industry part. Known for its durability and consistent performance, this device has been a go-to choice in power electronics for decades. Its proven track record ensures dependable sourcing and broad application support across industrial and consumer markets.

FAQ

What is the maximum voltage rating of the IRF630?

The device supports a maximum drain-to-source voltage of 200 volts. This rating defines the highest voltage the MOSFET can safely block when turned off, making it suitable for a wide range of power supply and switching applications.

Can the IRF630 be used in high-frequency switching circuits?

Yes, due to its relatively low gate charge and fast switching characteristics, it is well-suited for high-frequency applications such as PWM controllers and switching power supplies, where minimizing switching losses is critical.

What are the thermal considerations when using this MOSFET?

The IRF630 is packaged in a TO-220 case, which allows for efficient heat dissipation when mounted on a proper heat sink. Its maximum power dissipation is 125 watts, but actual thermal management depends on operating conditions and PCB layout design