IQE013N04LM6CGSCATMA1 Overview
The IQE013N04LM6CGSCATMA1 is a high-performance N-channel MOSFET designed to deliver efficient power switching and low conduction losses in demanding applications. This device offers low on-resistance and high current handling in a compact, surface-mount footprint, making it ideal for next-generation power management systems. Built for robust reliability and precise control, the IQE013N04LM6CGSCATMA1 supports designers in achieving superior efficiency and thermal performance. To learn more, visit IC Manufacturer.
IQE013N04LM6CGSCATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Id) | 120 A |
| RDS(on) (Max) | 1.3 m?? |
| Gate Charge (Qg) | Not specified |
| Power Dissipation (Ptot) | 300 W |
| Package / Case | SuperSO8 (PG-TDSON-8) |
| Mounting Type | Surface Mount (SMD/SMT) |
| Operating Temperature Range | -55??C to 175??C |
IQE013N04LM6CGSCATMA1 Key Features
- Ultra-low RDS(on) of 1.3 m?? ensures minimal conduction losses, directly improving system efficiency and reducing heat generation in high-current paths.
- Rated for 120 A continuous drain current, enabling robust performance in high-power applications such as motor drives, DC-DC converters, and power supply circuits.
- Compact SuperSO8 package supports high-density board layouts while maintaining excellent thermal performance, making it suitable for space-constrained designs.
- Wide operating temperature range from -55??C to 175??C offers reliability in harsh environments and industrial conditions.
IQE013N04LM6CGSCATMA1 Advantages vs Typical Alternatives
Compared to typical MOSFETs, this device offers significantly lower on-resistance, allowing for reduced conduction losses and greater overall system efficiency. The high current capability and advanced surface-mount package deliver reliable performance and simplified PCB integration, making it a superior choice for engineers seeking higher efficiency and reliability in power switching applications.
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Typical Applications
- High-efficiency DC-DC converters: The device??s low RDS(on) and high current handling make it an excellent fit for synchronous rectification and primary side switching in modern DC-DC converter topologies.
- Motor control circuits: Suitable for industrial and automotive motor drivers where reliable switching and low heat dissipation are crucial.
- Power management modules: Used in power distribution and battery management systems requiring consistent low-loss switching.
- Switching power supplies: Provides efficient and reliable switching in SMPS designs operating under demanding thermal and electrical constraints.
IQE013N04LM6CGSCATMA1 Brand Info
This product represents the latest in advanced MOSFET technology from a leading semiconductor manufacturer, engineered to address the evolving needs of power electronics. The IQE013N04LM6CGSCATMA1 is carefully optimized for low on-resistance, high current capacity, and robust thermal characteristics, reflecting the brand??s commitment to quality, performance, and innovation. It is widely adopted in industrial, automotive, and high-performance consumer applications where efficiency and reliability are paramount.
FAQ
What are the main benefits of using the IQE013N04LM6CGSCATMA1 in power management applications?
This device offers ultra-low on-resistance and high current capability, which directly translate to reduced power losses, improved thermal performance, and increased system efficiency in power management circuits.
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What type of package is used, and how does it impact thermal management?
The SuperSO8 (PG-TDSON-8) surface-mount package provides a compact form factor with low thermal resistance, supporting efficient heat dissipation and facilitating high-density PCB layouts in power electronics.
Is the IQE013N04LM6CGSCATMA1 suitable for automotive or industrial environments?
Yes, the wide operating temperature range from -55??C to 175??C and robust current handling make it suitable for demanding automotive and industrial environments where reliability and consistent performance are required.
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How does the low RDS(on) value benefit switching designs?
The exceptionally low RDS(on) of 1.3 m?? minimizes conduction losses during switching, enabling higher efficiency and lower heat generation, which is especially critical in high-frequency or high-current designs.
Can this device be used in compact, space-constrained systems?
Absolutely. The small surface-mount package and high power density make it ideal for compact designs where board space is limited but high performance and reliability cannot be compromised.
