IPW65R019C7FKSA1 Power MOSFET Transistor, TO-247 Package, Infineon

  • Serves as a power semiconductor device, enabling efficient switching and control in electronic circuits.
  • Features a TO-220 package, which allows for straightforward heat dissipation and easy mounting on PCBs.
  • Compact package size helps minimize board space requirements in densely populated electronic assemblies.
  • Often used in power supply units, motor drives, and inverter circuits to enhance overall system performance.
  • Manufactured to provide consistent electrical characteristics, supporting stable operation in demanding environments.
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IPW65R019C7FKSA1 Overview

The IPW65R019C7FKSA1 is a high-performance power MOSFET optimized for demanding industrial and power conversion environments. Featuring robust voltage and current handling, this device is engineered for energy-efficient switching and reliable operation in high-voltage applications. With its advanced design and low RDS(on) characteristics, it enables improved system efficiency, minimized heat generation, and enhanced durability. Its TO-247 package supports easy integration into power modules, making it a strong choice for engineers prioritizing reliability and performance. Discover more at IC Manufacturer.

IPW65R019C7FKSA1 Technical Specifications

ParameterValue
Part NumberIPW65R019C7FKSA1
Device TypeN-Channel MOSFET
Drain-Source Voltage (VDS)650 V
Drain Current (ID)75 A
RDS(on) (Max)0.019 ??
Gate Charge (Qg)??
Package / CaseTO-247-3
Operating Temperature Range-55??C to +150??C
Mounting TypeThrough Hole
PolarityN-Channel

IPW65R019C7FKSA1 Key Features

  • High voltage handling capability enables use in demanding power conversion and industrial switching systems, ensuring robust system design.
  • Low RDS(on) value significantly lowers conduction losses, improving overall energy efficiency and reducing thermal management requirements.
  • TO-247 package supports high current throughput and reliable thermal performance, facilitating integration into high-power modules.
  • Wide operating temperature range provides flexibility for challenging industrial and environmental conditions.
  • N-Channel configuration offers fast switching characteristics, beneficial for high-frequency applications.

IPW65R019C7FKSA1 Advantages vs Typical Alternatives

This device stands out due to its low RDS(on) and high voltage rating, which together maximize power efficiency and minimize heat generation. Its robust TO-247 package supports higher current flows and better thermal performance than many alternatives, making it ideal for applications where reliability and energy savings are paramount. Related function words such as “integration” and “switching” highlight its suitability for modern power designs.

Typical Applications

  • Switch mode power supplies (SMPS) ?? The device??s high voltage and current ratings make it suitable for efficient and reliable power conversion in industrial and commercial SMPS designs.
  • Motor drives ?? Its fast switching capability and thermal performance support precise control and efficiency in variable speed drives for automation and HVAC systems.
  • Renewable energy inverters ?? Used in solar or wind power inverter systems, it enables high-efficiency DC-AC conversion under demanding load conditions.
  • Uninterruptible power supplies (UPS) ?? The high current handling and ruggedness make it ideal for UPS systems requiring continuous operation and fast switching speeds.

IPW65R019C7FKSA1 Brand Info

The IPW65R019C7FKSA1 is produced by a recognized brand in the semiconductor industry, known for reliable discrete power devices. This MOSFET is engineered to deliver high efficiency, robustness, and performance in power switching applications. Its advanced construction and packaging are designed to meet the rigorous demands of industrial, energy, and automation sectors, ensuring long lifecycle and consistent operation in mission-critical systems.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The device is rated for a maximum drain-source voltage of 650 V, allowing it to be used in high-voltage circuits commonly found in industrial power supplies and inverter applications.

What is the RDS(on) value, and why is it important?

The maximum RDS(on) is 0.019 ??. A lower RDS(on) minimizes conduction losses, which translates to improved energy efficiency and reduced heat dissipation during operation.

Which package type does the IPW65R019C7FKSA1 use?

This MOSFET is supplied in a TO-247-3 package. The package supports high current flows and offers superior thermal characteristics, making it suitable for high-power implementations.

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Can this device be used in high-temperature environments?

Yes, the device operates in a wide temperature range from -55??C to +150??C, making it suitable for use in harsh industrial environments and applications with significant temperature variations.

What are some common applications for this power MOSFET?

Typical applications include switch mode power supplies (SMPS), motor drives, renewable energy inverters, and uninterruptible power supplies (UPS), where efficient power conversion and reliable switching are essential.

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