IPW60R080P7XKSA1 Power MOSFET Transistor, 600V 80m??, TO-220 Package

  • Functions as a power MOSFET, enabling efficient switching and control in power management applications.
  • Features an 80 m?? RDS(on) value, which helps minimize conduction losses for improved efficiency.
  • Offered in a TO-220 package, allowing straightforward mounting and optimized thermal performance in compact layouts.
  • Suitable for use in power supplies, where it can support high-speed switching and stable output regulation.
  • Designed for consistent performance and robust operation in demanding electronic environments.
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IPW60R080P7XKSA1 Overview

The IPW60R080P7XKSA1 is a high-performance power MOSFET engineered for demanding industrial and commercial applications requiring efficient switching and robust reliability. Designed to operate at high voltages with low on-resistance, it enables enhanced power density and thermal performance in modern electronic systems. This device is well-suited to applications such as power supplies, motor drives, and inverters, where efficiency and reliability are paramount. For detailed technical support and sourcing, visit IC Manufacturer.

IPW60R080P7XKSA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-to-Source Voltage (Vds)600 V
Continuous Drain Current (Id)60 A
RDS(on) (Max)0.08 ??
Gate Charge (Qg)192 nC
Package / CaseTO-247-3
PolarityN-Channel
Mounting StyleThrough Hole
TechnologyPower MOSFET

IPW60R080P7XKSA1 Key Features

  • Low RDS(on) of 0.08 ?? ensures minimal conduction losses, resulting in higher overall efficiency for power conversion applications.
  • High voltage capability up to 600 V supports use in industrial inverters and switching power supplies where robust isolation is critical.
  • High continuous drain current rating of 60 A enables the device to handle substantial load currents without compromising reliability.
  • TO-247-3 package facilitates excellent thermal dissipation and easy integration into standard heatsink designs, supporting higher power densities.

IPW60R080P7XKSA1 Advantages vs Typical Alternatives

This N-channel MOSFET stands out due to its combination of low RDS(on), high current handling, and superior voltage tolerance, offering increased efficiency and reduced heat generation compared to standard alternatives. Its robust TO-247 package and advanced technology contribute to reliable operation in power-demanding environments, making it a preferred choice for engineers optimizing for power density and system longevity.

Typical Applications

  • Switching Power Supplies: The device??s high voltage and current capabilities make it ideal for use in high-efficiency switch-mode power supplies, improving energy conversion and thermal management.
  • Motor Drives: Its robust performance supports variable frequency drives and industrial motor controllers, enabling precise control and reliable operation.
  • Inverters: Suitable for solar inverters and UPS systems, where efficient DC-AC conversion and high reliability are required.
  • Power Factor Correction Circuits: The fast switching and low losses are beneficial in active PFC circuits found in industrial and commercial power systems.

IPW60R080P7XKSA1 Brand Info

The IPW60R080P7XKSA1 is developed with a focus on delivering high efficiency and reliability for advanced power management applications. Its design reflects a commitment to quality, supporting engineers and system integrators in creating solutions that demand robust, high-voltage switching devices. This product is recognized for its performance in critical industrial and commercial sectors, backed by a tradition of engineering excellence and innovation in semiconductor technology.

FAQ

What type of device is the IPW60R080P7XKSA1 and what applications is it best suited for?

The IPW60R080P7XKSA1 is an N-channel power MOSFET designed for high-voltage, high-current applications. It is best suited for use in power supplies, motor drives, inverters, and power factor correction circuits, where efficiency and robust performance are required.

What are the primary benefits of using this MOSFET in a power supply design?

This device offers low on-resistance and high current capability, which helps minimize conduction losses and improve overall efficiency. Its high voltage rating ensures safe operation in demanding power supply environments, reducing the risk of failure and enhancing system reliability.

How does the TO-247-3 package benefit thermal management?

The TO-247-3 package provides a large surface area for effective heat dissipation, enabling higher power handling and straightforward integration with standard heatsinks. This packaging helps maintain lower device temperatures during operation, supporting long-term reliability.

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Is the IPW60R080P7XKSA1 suitable for fast switching applications?

Yes, with its advanced MOSFET technology and optimized gate charge, this component is well-suited for fast switching operations, which is essential in applications such as switch-mode power supplies and active power factor correction circuits.

What mounting style does this device use and what are its integration advantages?

This MOSFET uses a through-hole mounting style, which provides secure mechanical stability and reliable electrical connections. This makes it especially suitable for high-power applications where robust assembly and effective heat removal are critical.

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