IPW60R070P6XKSA1 Overview
The IPW60R070P6XKSA1 is a high-performance power MOSFET engineered for industrial switching and energy conversion applications. Designed with advanced silicon technology, this component offers low on-resistance and high efficiency, making it suitable for demanding power management tasks. Its robust construction and optimized switching behavior ensure reliable operation in harsh environments. From motor drives to power supplies, the device is an essential building block for engineers seeking consistent performance and system longevity. For more information on sourcing and integration, visit the IC Manufacturer website.
IPW60R070P6XKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current | 43 A |
| RDS(on) (Max) | 0.07 ?? |
| Gate Charge (Qg) | 155 nC |
| Power Dissipation | 357 W |
| Package | TO-247 |
| Operating Temperature Range | -55??C to 150??C |
IPW60R070P6XKSA1 Key Features
- High voltage capability up to 600 V, enabling use in industrial-grade power conversion and switching circuits.
- Low RDS(on) of 0.07 ??, which minimizes conduction losses and improves system efficiency under heavy loads.
- Large continuous drain current capacity of 43 A, supporting high-power designs without compromising reliability.
- High power dissipation rating (357 W), ensuring effective thermal management for demanding environments.
- Robust TO-247 package provides mechanical durability and facilitates efficient heat dissipation.
- Wide operating temperature range (-55??C to 150??C) ensures stable performance in extreme conditions.
- Optimized total gate charge (Qg 155 nC) for balanced switching speed and efficiency.
IPW60R070P6XKSA1 Advantages vs Typical Alternatives
This device stands out due to its combination of high voltage tolerance, low on-resistance, and significant current handling capability. Compared to standard MOSFETs, it delivers lower conduction losses, better thermal performance, and enhanced reliability. The robust package and wide temperature range further support dependable operation in critical industrial and power management systems, providing a distinct edge in both efficiency and lifespan.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial motor drives: Ensures efficient switching and reliable operation in variable frequency drives, supporting high load currents and voltage transients commonly found in automation and manufacturing environments.
- Switch mode power supplies (SMPS): Offers low switching losses and robust operation, ideal for use in high-efficiency power conversion topologies.
- Uninterruptible power supplies (UPS): Handles high voltages and continuous currents, ensuring stable power delivery and rapid switching during backup operations.
- Photovoltaic inverters: Supports energy conversion in solar systems, where high reliability and efficiency are required for long-term field deployment.
IPW60R070P6XKSA1 Brand Info
The IPW60R070P6XKSA1 is part of a trusted series of power MOSFETs designed for high-voltage, high-current industrial applications. Engineered to deliver superior switching performance and robust thermal handling, this product is recognized for its contribution to reliable and efficient power management solutions. Its advanced semiconductor construction and TO-247 package reflect a commitment to quality and durability, making it a preferred choice for engineers and system designers across a range of demanding sectors.
FAQ
What is the maximum voltage rating for the IPW60R070P6XKSA1?
The device features a drain-source voltage rating of 600 V, making it suitable for use in high-voltage industrial and power conversion applications where reliable isolation and safety margins are critical.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Which package type is used for this MOSFET, and why is it significant?
The IPW60R070P6XKSA1 is provided in a TO-247 package, known for its ability to handle high power dissipation and ease of mounting to heatsinks, which is essential in thermal management of high-current applications.
What are the main efficiency advantages of using this MOSFET in power electronics?
Its low RDS(on) value of 0.07 ?? reduces conduction losses, while the optimized gate charge ensures balanced switching speed, contributing to higher system efficiency and minimized energy loss during operation.
📩 Contact Us
In which environments can this device reliably operate?
With an operating temperature range from -55??C to 150??C, this MOSFET is well-suited for use in both standard and harsh industrial environments, providing stable electrical characteristics over a wide range of conditions.
Can the IPW60R070P6XKSA1 be used in renewable energy systems?
Yes, its high voltage, current capability, and efficient switching characteristics make it appropriate for renewable energy systems such as photovoltaic inverters, where reliable energy conversion and long-term durability are essential.
