IPW60R045P7XKSA1 Power MOSFET Transistor, 600V 45A, TO-247 Package

  • Serves as a power MOSFET, enabling efficient switching and power management in electronic circuits.
  • Features a TO-247 package, which supports high power dissipation and ease of mounting on heat sinks.
  • The package design allows for board-space savings and facilitates thermal management in compact systems.
  • Well-suited for use in power supplies, motor drives, or inverter applications requiring robust switching capabilities.
  • Manufactured for consistent performance, the device supports stable operation across demanding environments.
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IPW60R045P7XKSA1 Overview

The IPW60R045P7XKSA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power management applications. Designed to deliver low on-resistance and robust voltage handling, this component is optimized for efficiency and durability in a wide range of electronic systems. Its advanced silicon technology supports improved switching speed and thermal performance, making it suitable for today??s compact, high-density power designs. For purchasing or detailed technical support, visit IC Manufacturer.

IPW60R045P7XKSA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (Vds)600 V
Continuous Drain Current (Id)41 A
RDS(on) (Max)0.045 ??
Gate Charge (Qg)ÿ
PackageTO-247-3
Mounting TypeThrough Hole
Operating Temperature Rangeÿ
PolarityN-Channel

IPW60R045P7XKSA1 Key Features

  • High voltage capability of 600 V allows use in industrial-grade power circuits, supporting enhanced system reliability in demanding environments.
  • Low RDS(on) of 0.045 ?? minimizes conduction losses, improving overall system efficiency for high-power switching applications.
  • Strong continuous drain current rating (41 A) enables the handling of high load currents without performance degradation.
  • TO-247-3 package provides superior thermal management, ensuring reliable operation in compact or tightly packed designs.

IPW60R045P7XKSA1 Advantages vs Typical Alternatives

This MOSFET offers a lower on-resistance and higher voltage capability compared to many standard alternatives, resulting in reduced power losses and improved energy efficiency. Its robust package and high current support enable reliable integration into industrial power systems, where both performance and longevity are mission-critical.

Typical Applications

  • Industrial power supplies: The device??s high voltage and current ratings make it well suited for use in switched-mode power supplies (SMPS), motor drives, and industrial automation, where efficient energy conversion and robust switching are essential.
  • Renewable energy systems: Suitable for photovoltaic inverters and solar panel optimizers, supporting reliable high-voltage operation and improved thermal management.
  • Uninterruptible power supplies (UPS): Its efficiency and current handling capabilities make it ideal for UPS inverter stages and battery management systems.
  • Electric vehicle charging stations: The MOSFET??s ruggedness and power density facilitate integration into EV charging infrastructure and other high-power DC systems.

IPW60R045P7XKSA1 Brand Info

IPW60R045P7XKSA1 is a product developed using advanced MOSFET technology to address the needs of engineers and designers in the industrial and power electronics sectors. The device is produced by a leading semiconductor manufacturer recognized for high-quality, reliable components. This part is engineered to deliver the performance, efficiency, and ruggedness required in contemporary energy, automation, and industrial applications, supporting innovation across a wide spectrum of systems.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device can handle a drain-source voltage up to 600 V, making it suitable for high-voltage power switching and industrial energy conversion circuits where robust voltage endurance is required.

Which package style is offered for this part and why is it important?

The part comes in a TO-247-3 package, which is designed for through-hole mounting. This package provides excellent thermal dissipation, supporting higher current operation and reliable heat management in demanding environments.

Can this MOSFET be used in renewable energy applications?

Yes, due to its high voltage and current ratings, the component is well suited for renewable energy applications such as solar inverters and other power conversion systems where efficiency and reliability are crucial.

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How does the low RDS(on) benefit power designs?

The low RDS(on) of 0.045 ?? reduces conduction losses during operation, resulting in higher system efficiency and lower heat generation, which are especially valuable in high-power switching applications.

Is this device suitable for compact or high-density designs?

Yes, the combination of a robust TO-247-3 package and excellent electrical characteristics allows for reliable operation in compact assemblies or high-density layouts, where thermal management and efficient performance are essential.

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