IPTG014N10NM5ATMA1 N-Channel MOSFET, 100V 14A, OptiMOS, TO-252 Package

  • Serves as an N-channel MOSFET, enabling efficient switching and amplification in electronic circuits.
  • Features a maximum drain-source voltage suitable for handling moderate power loads safely.
  • Compact SOT-23 package saves board space, allowing for high-density PCB layouts in tight designs.
  • Ideal for use in load switching applications, protecting downstream components and improving system efficiency.
  • Manufactured to meet consistent quality standards, supporting reliable performance in demanding environments.
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产品上方询盘

IPTG014N10NM5ATMA1 Overview

The IPTG014N10NM5ATMA1 is a high-performance N-channel MOSFET expertly designed for demanding industrial and power management applications. Engineered to deliver low on-resistance and high-speed switching, this device is optimized for efficiency and reliability in modern electronic systems. With its robust construction and compact form factor, the IPTG014N10NM5ATMA1 is well-suited for a wide range of power conversion and control solutions. For more details about sourcing and integration, visit IC Manufacturer.

IPTG014N10NM5ATMA1 Technical Specifications

ParameterValue
Transistor PolarityN-Channel
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)14 A
Rds(on) Max12.6 mOhm @ 10V
Gate Charge (Qg)15 nC
Package / CasePG-TDSON-8
Mounting TypeSurface Mount
Operating Temperature Range-55??C to +175??C
ConfigurationSingle

IPTG014N10NM5ATMA1 Key Features

  • Low Rds(on) of 12.6 mOhm at 10V minimizes conduction losses, improving overall system efficiency in power conversion circuits.
  • High voltage rating of 100 V enables safe operation in applications requiring substantial voltage headroom, enhancing reliability and flexibility for designers.
  • Compact PG-TDSON-8 package supports high-density board layouts and automated surface mount processes, saving board space and reducing assembly time.
  • Wide operating temperature range from -55??C to +175??C ensures dependable performance in both standard and harsh industrial environments.

IPTG014N10NM5ATMA1 Advantages vs Typical Alternatives

This advanced MOSFET stands out with its low Rds(on) and high drain current capability, offering superior efficiency and reduced thermal losses compared to standard alternatives. The wide temperature range and robust package support reliable operation in challenging conditions, making it an optimal choice for power management and switching designs where both performance and longevity are essential.

Typical Applications

  • Switching power supplies: The device??s fast switching and low on-resistance enable higher efficiency and power density in AC-DC and DC-DC converters.
  • Motor drives: Suitable for use in industrial motor control circuits, where reliable high-current switching is required.
  • Battery management systems: Provides efficient and robust switching for battery protection, charging, and discharging operations.
  • Load switching in automation equipment: Ensures reliable load control and minimizes energy loss in factory and process automation systems.

IPTG014N10NM5ATMA1 Brand Info

The IPTG014N10NM5ATMA1 is part of a reputable lineup of power MOSFETs built to meet the stringent demands of industrial and commercial electronics. Known for their robust construction and consistent performance, these devices are engineered with advanced process technology, ensuring low conduction losses and high switching speeds. The focus on quality and reliability makes this MOSFET a trusted component among engineers seeking dependable solutions for challenging application environments.

FAQ

What is the maximum drain-source voltage rating for the IPTG014N10NM5ATMA1?

The device is rated for a maximum drain-source voltage of 100 V, making it suitable for high-voltage switching and power management circuits where voltage headroom is critical for reliable operation.

What package type does the IPTG014N10NM5ATMA1 use, and why is it beneficial?

It features the PG-TDSON-8 surface mount package, which allows for compact PCB layouts, efficient heat dissipation, and compatibility with automated assembly processes. This supports both design flexibility and manufacturing efficiency.

How does the low Rds(on) value benefit end applications?

A low Rds(on) of 12.6 mOhm means reduced conduction losses during operation, resulting in higher energy efficiency and less heat generation in power supplies, motor drives, and other switching applications.

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产品中间询盘

Can the IPTG014N10NM5ATMA1 operate in harsh temperature environments?

Yes, it is rated for operation from -55??C to +175??C, ensuring stable performance in both low- and high-temperature settings, which is essential for industrial and automotive environments.

Is this MOSFET suitable for high-current switching applications?

With a continuous drain current rating of 14 A, this device is well-suited for applications that require handling significant current levels, such as motor drives, battery management, and high-power switching circuits.

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