IPTC026N12NM6ATMA1 Power MOSFET, 120V 26A, TO-220 Package, N-Channel Transistor

  • Provides efficient power management to help optimize electronic device performance and extend operational lifespan.
  • Features a 12-pin package, allowing integration into space-constrained designs and enabling flexible PCB layout.
  • Compact footprint reduces board space requirements, supporting miniaturized systems and densely populated assemblies.
  • Suitable for use in industrial automation equipment, where stable power supply is critical for reliable operation.
  • Manufactured with standard quality controls to support consistent, dependable performance in demanding environments.
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IPTC026N12NM6ATMA1 Overview

The IPTC026N12NM6ATMA1 is a robust power MOSFET engineered for high-performance industrial and commercial applications. Featuring advanced N-channel trench technology, it delivers low on-resistance and high current handling in a compact package. This device is optimized for switching applications, offering efficient energy management and reliable operation under demanding conditions. Its thermally enhanced package makes it ideal for environments requiring high efficiency and durability. For sourcing and technical details, visit IC Manufacturer.

IPTC026N12NM6ATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 120 V
Continuous Drain Current (ID) 26 A
RDS(on) (Maximum) 42 m?
Gate Charge (Qg) Typical value available in datasheet
Package / Case TO-220 FullPAK (IPAK)
Mounting Style Through Hole
Channel Configuration Single
Technology Trench

IPTC026N12NM6ATMA1 Key Features

  • Low RDS(on) enables efficient power switching, significantly reducing conduction losses for high-current circuits.
  • High drain-to-source voltage rating of 120 V provides robust performance in demanding industrial environments, ensuring safe operation under voltage transients.
  • Thermally optimized TO-220 FullPAK package ensures effective heat dissipation, increasing reliability during sustained operation.
  • Advanced trench technology offers improved switching characteristics, supporting higher frequency designs and enhancing overall efficiency.

IPTC026N12NM6ATMA1 Advantages vs Typical Alternatives

This power MOSFET stands out due to its combination of low on-resistance and high current capacity, resulting in lower power losses and improved system efficiency. Compared to conventional alternatives, its trench technology and thermally enhanced packaging deliver greater reliability and performance consistency in high-demand scenarios. These related function words highlight its suitability for precise and energy-efficient designs.

Typical Applications

  • Switched-mode power supplies (SMPS): The low RDS(on) and high current capability make it ideal for primary-side and synchronous rectification stages in SMPS, boosting conversion efficiency and minimizing thermal stress on the system.
  • Motor control circuits: Well-suited for industrial and commercial motor drivers where reliable switching of moderate voltages and high currents is required.
  • DC-DC converters: Enhances efficiency in step-down or step-up converters by reducing conduction and switching losses, making it a solid choice for power management modules.
  • Solar inverters and renewable energy systems: Its rugged design and voltage rating meet the demands of photovoltaic array switching and inverter bridge topologies.

IPTC026N12NM6ATMA1 Brand Info

This device is part of a trusted portfolio renowned for delivering advanced semiconductor solutions to industrial and commercial sectors. The IPTC026N12NM6ATMA1 exemplifies the brand??s commitment to innovation in power management, leveraging specialized trench technology and robust packaging. It is engineered to meet high standards of efficiency, reliability, and thermal performance, making it a preferred choice for engineers and designers requiring proven MOSFET performance in challenging environments.

FAQ

What makes the IPTC026N12NM6ATMA1 suitable for high-efficiency power conversion?

Its low on-resistance (RDS(on)) and advanced trench technology minimize conduction and switching losses, making it highly efficient in power conversion circuits such as SMPS and DC-DC converters. This translates to cooler operation and improved energy savings in demanding applications.

How does the device??s package improve thermal management?

The TO-220 FullPAK package features a thermally optimized design that facilitates effective heat dissipation. This allows the MOSFET to operate reliably under higher currents and extended run times, reducing the risk of overheating and enhancing overall system reliability.

Is the IPTC026N12NM6ATMA1 compatible with automated assembly processes?

Yes, its through-hole IPAK/TO-220 package is designed for compatibility with standard PCB mounting and can be integrated into automated manufacturing lines. This supports streamlined production and ensures mechanical stability in end products.

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What type of applications benefit most from using this MOSFET?

Applications requiring reliable, high-current and moderate voltage switching??such as motor control, power supplies, DC-DC converters, and renewable energy systems??are ideal candidates. The device??s robust construction ensures consistent performance in both industrial and commercial settings.

Does the IPTC026N12NM6ATMA1 offer advantages for renewable energy designs?

Absolutely. Its high voltage rating and reliable switching performance make it well-suited for solar inverters and other renewable energy systems, where efficiency and durability are crucial for long-term operation and return on investment.

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