IPTC007N06NM5ATMA1 N-Channel MOSFET, 60V, 70A, TO-252 Package

  • Designed for efficient electronic switching, enabling reliable control of current in various circuit applications.
  • Features an N-channel MOSFET construction, allowing for low on-resistance and improved energy efficiency in operation.
  • Compact package conserves board space, making it suitable for high-density layouts and portable device designs.
  • Ideal for use in power management, load switching, or DC-DC converter circuits, supporting stable system performance.
  • Manufactured with attention to quality, helping ensure consistent operation and long-term durability in end products.
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IPTC007N06NM5ATMA1 Overview

The IPTC007N06NM5ATMA1 is a high-efficiency N-channel MOSFET designed for demanding industrial and power management applications. Engineered for low on-resistance and robust current handling, this component delivers reliable switching performance in space-constrained designs. With a compact PG-TDSON-8 SMD package, it ensures optimal thermal management and simplified PCB integration. Its low gate charge further enhances switching speeds and overall efficiency, making it suitable for use in advanced electronic systems where thermal performance, power density, and reliability are essential. IC Manufacturer

IPTC007N06NM5ATMA1 Technical Specifications

ParameterValue
Product TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)120A
On-Resistance (RDS(on))0.75 m?? (max)
Gate Charge (Qg)42 nC
Package / CasePG-TDSON-8
Mounting TypeSurface Mount (SMD)
Operating Temperature Range-55??C to +175??C
PolarityN-Channel

IPTC007N06NM5ATMA1 Key Features

  • Ultra-low on-resistance of 0.75 m?? for reduced conduction losses, enhancing system efficiency in high-current applications.
  • High current capability (up to 120A continuous drain current) supports robust power delivery in motor drives and power supplies.
  • Compact PG-TDSON-8 SMD package optimizes board space and thermal dissipation, streamlining compact system designs.
  • Wide operating temperature range (-55??C to +175??C) ensures stable performance in harsh or industrial environments.
  • Low gate charge (42 nC) enables fast switching, minimizing switching losses and improving overall circuit response times.
  • Surface mount design supports automated assembly for high-volume manufacturing and consistent placement accuracy.

IPTC007N06NM5ATMA1 Advantages vs Typical Alternatives

Compared to typical alternatives, this N-channel MOSFET stands out with its exceptionally low on-resistance and high current handling capability, resulting in lower conduction losses and improved energy efficiency. Its compact package and low gate charge facilitate faster switching and easier integration, while the broad temperature range supports reliable operation in demanding industrial settings. These advantages make it a preferred choice for high-performance power management and switching applications.

Typical Applications

  • Power Management in Industrial Systems: The device is suited for efficient switching and control in high-current power management circuits, such as DC-DC converters and power supply units, where low losses and robust reliability are critical.
  • Motor Control and Drives: Its high current capability and thermal performance make it ideal for use in motor drivers and servo control modules in factory automation and robotics.
  • Battery Management Systems: The low on-resistance and fast switching characteristics enable effective battery protection and charging circuits in energy storage and renewable energy solutions.
  • Switching Regulators and Inverters: Suitable for compact and efficient switching regulators, inverters, and general-purpose load switching in commercial and industrial electronics.

IPTC007N06NM5ATMA1 Brand Info

This MOSFET is produced by a leading global semiconductor manufacturer, recognized for delivering high-performance and reliable power devices. The IPTC007N06NM5ATMA1 exemplifies the brand??s commitment to innovation in power electronics, offering robust current handling, low switching losses, and enhanced system efficiency. Its design aligns with the needs of industrial, automotive, and commercial applications, combining advanced packaging with stringent quality standards for dependable operation in mission-critical environments.

FAQ

What package type does the IPTC007N06NM5ATMA1 use, and how does it benefit thermal performance?

This device utilizes the PG-TDSON-8 surface-mount package, which is engineered for efficient heat dissipation and compact board layouts. Its optimized thermal characteristics support higher current operation and improved reliability in space-constrained designs.

Is the IPTC007N06NM5ATMA1 suitable for high-frequency switching applications?

Yes, the low gate charge (42 nC) of this MOSFET enables fast switching, which is advantageous for high-frequency applications such as switching regulators and power converters, helping to minimize switching losses and heat generation.

Can this device be used in automotive or industrial environments with harsh temperatures?

With an operating temperature range from -55??C to +175??C, the MOSFET is well-suited for use in demanding environments, including automotive and industrial systems where extreme conditions are common.

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What advantages does the low on-resistance provide for circuit designers?

The on-resistance of 0.75 m?? ensures reduced conduction losses, which translates to higher efficiency and less heat generation. This is particularly beneficial in high-current applications, as it improves overall system performance and reliability.

What mounting options are available and what are the integration benefits?

The surface-mount PG-TDSON-8 package supports automated pick-and-place assembly processes, leading to improved manufacturing throughput, reduced placement errors, and simplified integration into modern PCB layouts for industrial and commercial electronics.

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