IPT65R040CFD7XTMA1 Overview
The IPT65R040CFD7XTMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. This device combines low on-resistance with robust voltage and current handling, making it an optimal choice for efficient switching in high-voltage environments. Its advanced trench technology ensures minimal switching losses and reliable operation under stress. With a compact TO-220 package and high efficiency, it supports engineers in creating compact, cost-effective, and ruggedized solutions for modern power electronics. For more details, visit IC Manufacturer.
IPT65R040CFD7XTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 34 A |
| On-State Resistance (RDS(on)) | 0.040 ?? |
| Gate Charge (Qg) | 150 nC |
| Power Dissipation | 208 W |
| Package / Case | TO-220-3 |
| Technology | Trench |
| Mounting Type | Through Hole |
| Polarity | N-Channel |
IPT65R040CFD7XTMA1 Key Features
- 650 V drain-source voltage allows for robust operation in high-voltage circuits, supporting demanding industrial and power supply designs.
- Low RDS(on) of 0.040 ?? reduces conduction losses, resulting in higher overall system efficiency and lower heat generation.
- High continuous drain current capability (34 A) meets the needs of applications requiring substantial current handling and reliability.
- Advanced trench technology provides fast switching performance, decreasing switching losses for improved energy efficiency.
- TO-220-3 package enables simple integration into existing designs with standardized through-hole mounting.
- High power dissipation rating (208 W) ensures reliability under heavy loads and extended operation.
- Gate charge of 150 nC allows for manageable gate driving requirements, facilitating efficient design of gate driver circuits.
IPT65R040CFD7XTMA1 Advantages vs Typical Alternatives
This MOSFET stands out thanks to its combination of high voltage tolerance, low on-resistance, and substantial current handling. Compared to standard alternatives, it offers improved switching efficiency and thermal management, enabling more compact and reliable designs. Its trench technology and robust TO-220 package support superior performance in high-stress environments, making it a preferred choice for engineers seeking durability and efficiency.
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Typical Applications
- Switched-Mode Power Supplies (SMPS): The device??s high voltage and current capabilities make it ideal for primary-side switching in industrial-grade SMPS, supporting high efficiency and thermal reliability.
- Motor Drives: Suitable for use in industrial motor control systems where robust switching and high current delivery are required.
- Uninterruptible Power Supplies (UPS): Enables efficient power conversion and transfer, improving system reliability and response time in backup power solutions.
- Inverters: Helps optimize inverter efficiency and minimize losses in renewable energy and industrial automation applications.
IPT65R040CFD7XTMA1 Brand Info
The IPT65R040CFD7XTMA1 is part of a distinguished lineup of power MOSFETs engineered for high-voltage, high-current applications. This product exemplifies the manufacturer??s focus on advanced trench technology and robust packaging standards. By offering superior switching characteristics, energy efficiency, and thermal performance, it addresses the stringent requirements of modern industrial and power management systems, ensuring reliable operation and long service life.
FAQ
What is the key advantage of the IPT65R040CFD7XTMA1 in high-voltage applications?
The device??s 650 V drain-source voltage rating, combined with its low on-resistance and strong current handling, allows it to efficiently manage high voltage levels while minimizing losses. This ensures robust operation and energy efficiency in high-voltage circuits.
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How does the trench technology benefit switching performance?
Trench technology reduces switching losses and allows for faster transitions between on and off states. This directly improves the efficiency of power conversion systems, making it suitable for fast-switching industrial and power supply applications.
What package type is used, and why is it important?
The TO-220-3 package offers excellent thermal dissipation and mechanical reliability. Its through-hole mounting simplifies integration into established power electronic boards, supporting robust operation in demanding environments.
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Can this MOSFET be used in motor control systems?
Yes, the device??s high current rating and low on-resistance make it a good fit for industrial motor drives, where efficient and reliable switching is required to handle varying load conditions and frequent operation cycles.
What are the power dissipation capabilities and their impact on design?
The device??s power dissipation rating of 208 W allows it to handle significant energy loads without overheating, supporting reliable operation under continuous stress and enabling more compact designs with fewer thermal constraints.
