IPT60R050G7XTMA1 Power MOSFET, N-Channel, TO-220 Package

IPT60R050G7XTMA1 Overview

The IPT60R050G7XTMA1 is a power MOSFET designed for demanding industrial and commercial applications, where high efficiency and robust performance are essential. With its low R_DS(on) and high voltage handling, this MOSFET is well-suited for use in power management circuits, motor drives, and high-frequency switching environments. Leveraging advanced trench technology, it delivers improved energy efficiency and thermal management. For engineers and sourcing specialists, the IPT60R050G7XTMA1 offers a reliable solution with a proven track record in performance-critical designs. IC Manufacturer

IPT60R050G7XTMA1 Technical Specifications

IPT60R050G7XTMA1 Key Features

• Low R_DS(on) of 0.05 ?? minimizes conduction losses, increasing efficiency in high-power circuits.
• 600 V drain-to-source voltage rating ensures robust operation in industrial and high-voltage environments.
• Trench MOSFET technology provides enhanced switching performance and reduced gate charge, supporting higher frequency designs.
• High continuous drain current capability (41 A) allows reliable handling of large loads in motor drives and power supplies.
• TO-220 FullPAK package offers ease of mounting and effective thermal dissipation for demanding thermal environments.
• Single N-channel configuration simplifies integration in standard power topologies.

IPT60R050G7XTMA1 Advantages vs Typical Alternatives

This device stands out among power MOSFETs with its combination of low R_DS(on), high voltage tolerance, and efficient trench technology. These attributes deliver lower conduction and switching losses compared to many conventional MOSFETs, resulting in improved system efficiency, cooler operation, and enhanced long-term reliability for industrial and commercial applications.

Typical Applications

• Switch Mode Power Supplies (SMPS): The high voltage and low R_DS(on) characteristics make this MOSFET ideal for primary side switching in efficient SMPS designs, supporting both industrial and commercial power conversion needs.
• Motor Drives: High current handling and robust voltage rating ensure reliable performance in AC and DC motor control circuits, where durability and efficiency are critical.
• UPS Systems: The device??s efficient switching and minimal losses help enhance battery backup and inverter stages in uninterruptible power supplies.
• Industrial Automation: Suitable for use in power management, relay replacement, and load switching within automated factory and process control systems, providing high reliability in continuous operation environments.

IPT60R050G7XTMA1 Brand Info

The IPT60R050G7XTMA1 is part of a renowned portfolio of power semiconductors, engineered for high reliability and efficiency. Designed using advanced trench MOSFET technology, the product targets applications requiring robust voltage handling and low conduction losses. Its TO-220 FullPAK packaging enables excellent thermal performance and easy integration into a wide range of industrial and commercial systems.

FAQ

What advantages does the trench technology in this MOSFET offer for industrial applications?

Trench technology enables lower R_DS(on) and reduced gate charge, which translates into higher efficiency and faster switching. These benefits are particularly valuable in industrial environments that demand reliable, high-frequency operation and lower energy losses.

Is the TO-220 FullPAK package suitable for high-power designs?

Yes, the TO-220 FullPAK package is designed for through-hole mounting and provides efficient thermal dissipation, making it well-suited for high-power applications where heat management and robust installation are important.

Can this device be used for both AC and DC motor control?

With its high voltage and current ratings, this MOSFET is suitable for a wide range of motor control applications, including both AC and DC motor drives, where reliable switching and low losses are essential.

How does the low R_DS(on) contribute to system efficiency?

A low R_DS(on) value means reduced conduction losses during operation. This not only increases the overall efficiency of the system but also helps minimize heat generation, allowing for more compact or simplified cooling solutions.

What is the typical gate charge, and why is it important?

The typical gate charge is 115 nC. This parameter is important because a lower gate charge enables faster and more efficient switching, reducing losses in high-frequency power conversion and improving overall system performance.