IPT067N20NM6ATMA1 N-Channel MOSFET, 200V 64A, OptiMOS TO-263 Package

  • Designed for efficient switching and amplification, this device supports enhanced power management in electronic circuits.
  • Features an N-channel MOSFET configuration, providing fast switching performance essential for high-speed applications.
  • Compact package helps save board space, supporting dense layouts in modern electronic designs.
  • Commonly used in power supply circuits, it assists with voltage regulation and energy efficiency in various systems.
  • Manufactured with quality standards to ensure stable operation and consistent performance under typical usage conditions.
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IPT067N20NM6ATMA1 Overview

The IPT067N20NM6ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. With its advanced trench technology and low RDS(on), this device delivers optimal efficiency and switching speed in compact power designs. It is engineered for robust performance in environments requiring high reliability and excellent thermal management. For more details, visit the IC Manufacturer website.

IPT067N20NM6ATMA1 Technical Specifications

Parameter Value
Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 200 V
Continuous Drain Current (ID) 65 A
RDS(on) (max) 0.067 ??
Gate Charge (Qg) 130 nC
Package TO-220 FullPAK
Technology Trench MOSFET
Operating Temperature Range -55??C to 150??C

IPT067N20NM6ATMA1 Key Features

  • Low RDS(on): Minimizes conduction losses, maximizing efficiency in high-current switching applications.
  • High Voltage Capability: Withstands up to 200 V, making it suitable for industrial power supplies and motor drives.
  • High Continuous Drain Current: Supports up to 65 A, enabling robust power delivery for demanding loads.
  • TO-220 FullPAK Package: Provides superior thermal performance and easy integration into standard PCB layouts.
  • Trench Technology: Ensures fast switching and reduced gate charge for improved dynamic performance.
  • Wide Operating Temperature Range: Reliable operation from -55??C to 150??C, ideal for harsh environments.

IPT067N20NM6ATMA1 Advantages vs Typical Alternatives

This device offers a compelling mix of low RDS(on), high voltage tolerance, and significant current capability, surpassing many conventional MOSFETs in efficiency and reliability. Its trench technology and FullPAK package further enhance thermal management and simplify integration, making it a preferred choice for designers seeking robust power switching solutions.

Typical Applications

  • Switch Mode Power Supplies (SMPS): The IPT067N20NM6ATMA1 is well-suited for high-efficiency SMPS topologies, where low conduction losses and high voltage capability are critical for compact, reliable power conversion.
  • Motor Drives and Industrial Automation: Its high current rating and fast switching performance make it ideal for controlling motors and actuators in industrial environments.
  • DC-DC Converters: Suitable for use in isolated and non-isolated converters where efficient high-current switching is required.
  • Battery Management Systems: Its robust voltage and current handling enable safe and reliable power delivery in energy storage and backup systems.

IPT067N20NM6ATMA1 Brand Info

The IPT067N20NM6ATMA1 is part of a trusted line of N-channel trench MOSFETs engineered for industrial and high-power applications. It reflects the brand??s commitment to quality, efficiency, and robust design, offering a balance of high voltage capability and low conduction losses. The FullPAK package ensures ease of use and reliable thermal properties, making this component a dependable choice for advanced power electronics projects.

FAQ

What is the maximum drain-to-source voltage supported by the IPT067N20NM6ATMA1?

The device supports a maximum drain-to-source voltage of 200 V, making it suitable for a wide range of high-voltage industrial and power supply applications, including motor control and robust DC-DC conversion.

Which package type is used for this MOSFET, and what are its integration benefits?

This product is offered in the TO-220 FullPAK package. The FullPAK design helps prevent heat buildup and allows for straightforward PCB integration, supporting effective thermal management in power-dense designs.

How does the low RDS(on) value benefit power electronics engineers?

With an RDS(on) (max) of 0.067 ??, the component minimizes conduction losses during operation. This results in improved overall system efficiency, cooler operation, and greater reliability in continuous high-current applications.

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Is this MOSFET suitable for use in harsh or high-temperature environments?

Yes, it operates reliably across a wide temperature range from -55??C to 150??C. This makes it a strong candidate for use in industrial, automotive, or other demanding environments where temperature resilience is essential.

What kinds of applications benefit most from the IPT067N20NM6ATMA1??s feature set?

Applications such as switch mode power supplies, high-current DC-DC converters, motor drives, and battery management systems gain from its high current capability, low on-resistance, and robust voltage rating, ensuring efficient and reliable operation.

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