IPT039N15N5ATMA1 Overview
The IPT039N15N5ATMA1 is a high-performance N-channel MOSFET engineered for demanding power switching and control applications in industrial and commercial electronics. Featuring a robust package design and optimized for efficiency, this device delivers low on-state resistance and strong current-handling capabilities. Designed for reliability in harsh environments, it supports a wide range of power supply and motor drive circuits. The IPT039N15N5ATMA1 is an ideal solution for engineers seeking high-speed switching, minimal energy loss, and compact integration. For more details, visit IC Manufacturer.
IPT039N15N5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 39 A |
| RDS(on) Max | 39 m?? |
| Gate Charge (Qg) | Not specified |
| Operating Temperature Range | -55??C to +175??C |
| Package | TO-220 FullPAK |
| Mounting Type | Through Hole |
| Polarity | N-Channel |
IPT039N15N5ATMA1 Key Features
- Low on-state resistance of 39 m?? maximizes efficiency by reducing power losses during switching operations.
- Supports high drain-source voltage (up to 150 V), enabling use in demanding industrial and power supply applications.
- Robust continuous drain current rating of 39 A ensures reliable operation in high-current environments.
- Wide operating temperature range from -55??C to +175??C ensures dependable performance under harsh thermal conditions.
- Standard TO-220 FullPAK package allows for straightforward integration and efficient heat dissipation.
- Through-hole mounting supports sturdy mechanical stability for industrial applications.
- N-channel polarity offers advantages in fast switching and low gate drive requirements.
IPT039N15N5ATMA1 Advantages vs Typical Alternatives
This device offers a competitive edge with its low RDS(on) value and high current capability, resulting in lower conduction losses and improved efficiency compared to standard MOSFETs. Its broad temperature range and robust packaging provide enhanced reliability and operational stability, making it well-suited for mission-critical power switching tasks. Engineers benefit from easier integration and improved system durability when using this component in their designs.
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Typical Applications
- Switching power supplies: Ideal for primary and secondary side switching in AC/DC and DC/DC converters due to its high voltage and current ratings, ensuring efficient energy transfer and minimal loss.
- Motor drives: Suitable for controlling electric motors in industrial automation, robotics, and servo applications where reliable, high-speed switching is required.
- Uninterruptible Power Supplies (UPS): Ensures stable power delivery and efficient battery management in backup power systems by handling high current and voltage demands.
- Lighting control systems: Used in electronic ballasts and LED drivers for high-efficiency lighting solutions requiring rugged semiconductor switches.
IPT039N15N5ATMA1 Brand Info
The IPT039N15N5ATMA1 is manufactured by a leading semiconductor supplier renowned for advanced power management and discrete solutions. This N-channel MOSFET exemplifies the brand??s commitment to performance, reliability, and innovation, empowering engineers to design robust and efficient electronic systems. Its inclusion in the manufacturer??s portfolio highlights a focus on industrial-grade quality and integration flexibility for high-demand markets.
FAQ
What is the maximum drain-source voltage supported by this MOSFET?
The device is rated for a maximum drain-source voltage (VDS) of 150 V, making it suitable for use in high-voltage power switching and control circuits across industrial applications.
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Can the IPT039N15N5ATMA1 handle continuous high current loads?
Yes, this MOSFET supports a continuous drain current of up to 39 A, ensuring reliable operation in circuits that require substantial current handling, such as motor drives and power supplies.
What are the key benefits of the TO-220 FullPAK package?
The TO-220 FullPAK package offers efficient heat dissipation, mechanical robustness, and ease of mounting, which are critical for high-power designs and environments that demand reliable, long-term operation.
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Is this device suitable for use in harsh thermal environments?
Absolutely. With an operating temperature range from -55??C to +175??C, the MOSFET is built to function reliably under extreme temperature conditions commonly encountered in industrial and outdoor installations.
What mounting method is recommended for this component?
The device is designed for through-hole mounting, providing secure mechanical attachment and reliable electrical connections, particularly advantageous in industrial and high-vibration settings.
