IPT015N10NF2SATMA1 Overview
The IPT015N10NF2SATMA1 is a power MOSFET designed for efficient load switching and power management in demanding industrial and automotive environments. Featuring a low on-resistance and robust package construction, this N-channel MOSFET is optimized for high-current, low-voltage applications where thermal performance and switching speed are critical. Its compact footprint and advanced process technology support high reliability and integration density, making it an excellent choice for modern circuit designs. For procurement and further technical documentation, visit IC Manufacturer.
IPT015N10NF2SATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 150 A |
| RDS(on) (Max) | 1.5 m?? |
| Gate Charge (Qg) | Not specified |
| Package Type | TO-220 FullPAK |
| Polarity | N-Channel |
| Mounting Style | Through Hole |
| Operating Temperature Range | -55 ??C to +175 ??C |
IPT015N10NF2SATMA1 Key Features
- Ultra-low RDS(on) at only 1.5 m??, which minimizes conduction losses and increases energy efficiency in high-current circuits.
- High current capability up to 150 A, supporting demanding load switching and motor control without thermal stress.
- 100 V drain-source voltage rating ensures robust performance and margin for industrial and automotive power rails.
- TO-220 FullPAK package with full isolation improves safety and simplifies PCB layout by eliminating the need for additional insulation hardware.
- Wide operating temperature range from -55 ??C to 175 ??C, ensuring reliable operation in harsh environmental conditions.
IPT015N10NF2SATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET offers distinct advantages over typical alternatives due to its exceptionally low on-resistance, high current handling, and robust TO-220 FullPAK package. These factors contribute to reduced power losses, higher efficiency, and superior thermal performance, making it a reliable choice for power management in both industrial and automotive applications where reliability and integration are crucial.
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Typical Applications
- Motor Drives and Inverters: The device is ideal for high-current motor control circuits in industrial automation and automotive traction systems, where low RDS(on) and high reliability are essential for efficient torque delivery and thermal management.
- Power Supply Switching: With its high voltage and current ratings, this MOSFET is well-suited for use in DC-DC converters and switch-mode power supplies, enabling efficient power conversion and load regulation.
- Battery Management Systems: It excels in battery protection and load switching roles, reducing losses and supporting high cycle durability in automotive or backup power modules.
- Solenoid and Relay Replacement: The device??s fast switching and robust isolation make it a practical choice for replacing traditional electromechanical relays in smart control and automation systems.
IPT015N10NF2SATMA1 Brand Info
The IPT015N10NF2SATMA1 represents a new generation of power MOSFETs engineered for industrial and automotive power management. Manufactured using advanced process technology, this device is designed to deliver low conduction losses, high current capacity, and enhanced reliability in a compact TO-220 FullPAK package. The product is tailored for professional engineers seeking efficient, robust solutions for high-performance circuit designs.
FAQ
What makes the IPT015N10NF2SATMA1 suitable for high-current applications?
Its maximum continuous drain current of 150 A and extremely low on-resistance of 1.5 m?? enable it to handle large loads efficiently with minimal power loss, making it ideal for high-current switching and motor drive applications.
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How does the TO-220 FullPAK package benefit circuit designers?
The FullPAK package provides integrated isolation, eliminating the need for external insulation hardware. This simplifies PCB layout, enhances safety, and reduces assembly complexity, especially in compact or high-voltage designs.
Can this device operate reliably in harsh environments?
Yes, the wide operating temperature range from -55 ??C to 175 ??C allows the device to function in extreme industrial or automotive environments, maintaining performance and reliability across diverse conditions.
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Is the IPT015N10NF2SATMA1 suitable for replacing relays in smart systems?
With its fast switching capability, high current rating, and robust package, this MOSFET can efficiently replace mechanical relays, offering improved reliability, longevity, and reduced control circuit complexity in automation or smart systems.
What are the main advantages of using this MOSFET in power supply designs?
The device??s low on-resistance and high current handling capability minimize conduction losses and thermal stress, enhancing the efficiency, reliability, and compactness of switch-mode power supplies or DC-DC converters.
